Solution growth of single-crystal perovskite structures

Jin, Song; Fu, Yongping

Solution growth of single-crystal perovskite structures

Patent · 18 September 2018

OSTI ID:1483380

Jin, Song; Fu, Yongping

A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.

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Research Organization:: Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: SC0002162

Assignee:: Wisconsin Alumni Research Foundation (Madison, WI)

Patent Number(s):: 10,077,507

Application Number:: 14/954,442

OSTI ID:: 1483380

Country of Publication:: United States

Language:: English

References (23)

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