Coherent growth of oxide films on a cleaved layered metal oxide substrate

Siwakoti, Prahald; Guo, Hangwen; Wang, Zhen; Zhu, Yimei; Fittipaldi, Rosalba; Vecchione, Antonio; Wang, Y.; Mao, Zhiqiang; Zhang, Jiandi

doi:10.1103/PhysRevMaterials.2.104407

Title: Coherent growth of oxide films on a cleaved layered metal oxide substrate

Journal Article · Thu Oct 18 00:00:00 EDT 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.2.104407· OSTI ID:1480966

Siwakoti, Prahald ^[1]; Guo, Hangwen ^[1]; Wang, Zhen ^[2]; Zhu, Yimei ^[3]; Fittipaldi, Rosalba ^[4]; Vecchione, Antonio ^[4]; Wang, Y. ^[5]; Mao, Zhiqiang ^[5]; Zhang, Jiandi ^[1]

Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy
Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy; Brookhaven National Lab. (BNL), Upton, NY (United States). Dept. of Energy Science and Technology
Brookhaven National Lab. (BNL), Upton, NY (United States). Dept. of Energy Science and Technology
Univ. di Salerno, Fisciano, Salerno (Italy). CNR-SPIN Unità di Salerno and Dipartimento di Fisica “E.R. Caianiello”
Tulane Univ., New Orleans, LA (United States). Dept. of Physics and Engineering Physics

Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La_2/3 Sr_1/3 Mn O₃ on Sr₂ Ru O₄ (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr₂ Ru O₄ at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La _2/3 Sr_1/3 Mn O₃ spontaneously diminishes the surface Ru O₆ in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. Finally, these results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; AC02-98CH10886; SC0002136; SC0012432

OSTI ID:: 1480966

Alternate ID(s):: OSTI ID: 1478596

Report Number(s):: BNL-209415-2018-JAAM; PRMHAR

Journal Information:: Physical Review Materials, Vol. 2, Issue 10; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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