All SiC power module based boost converter platform for grid-tied energy storage applications
- GeneSiC Semiconductor Inc., Dulles, VA (United States)
A bidirectional isolated boost converter topology based on 3.3 kV – 6.5 kV Silicon Carbide (SiC) monolithically integrated transistor /Schottky rectifier devices is proposed for energy storage applications. The 200-800 V dc output of the battery system is interfaced with the 13.8 kV, 60 Hz, 3-phase medium voltage distribution grid using this topology. The use of SiC integrated devices will result in significant reduced losses for the overall system. The proposed topology is for 400 kVA system. The grid voltage level is scalable from 12.47 kV ac to 13.8 kV ac for flexible grid interface operation. The operational frequency and power density of modern energy storage power systems is limited by the Silicon power switches. This proposed SBIR program will demonstrate an unprecedented advances in size, efficiency and functionality of energy storage systems.
- Research Organization:
- GeneSiC Semiconductor Inc., Dulles, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- SC0013816
- OSTI ID:
- 1479863
- Type / Phase:
- SBIR (Phase II)
- Report Number(s):
- DOE-GENESIC-1111
- Country of Publication:
- United States
- Language:
- English
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