Thermal and transport properties of U3Si2

Antonio, Daniel J.; Shrestha, Keshav; Harp, Jason M.; Adkins, Cynthia A.; Zhang, Yongfeng; Carmack, Jon; Gofryk, Krzysztof

doi:10.1016/j.jnucmat.2018.05.036

Title: Thermal and transport properties of U₃Si₂

Journal Article · Mon May 14 00:00:00 EDT 2018 · Journal of Nuclear Materials

DOI:https://doi.org/10.1016/j.jnucmat.2018.05.036· OSTI ID:1478507

Antonio, Daniel J. ^[1]; Shrestha, Keshav ^[1];

^[1];

^[1]

Idaho National Lab. (INL), Idaho Falls, ID (United States)

Here, we have studied U₃Si₂ by means of the heat capacity, electrical resistivity, Seebeck and Hall effects, and thermal conductivity in the temperature range 2-300 K and in magnetic fields up to 9 T. All the results obtained point to delocalized nature of 5f-electrons in this material. The low temperature heat capacity is enhanced (γ_el ~ 150 mJ/mol-K²) and shows an upturn in C_p/T (T), characteristic of spin fluctuations. The thermal conductivity of U₃Si₂ is ~8.5 W/m-K at room temperature and we show that the lattice part of the total thermal conductivity is small, with electrons dominating heat transport above 300 K.

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Research Organization:: Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1478507

Report Number(s):: INL/JOU-17-42333-Rev000

Journal Information:: Journal of Nuclear Materials, Vol. 508, Issue C; ISSN 0022-3115

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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