Silicon Qubits

Carroll, Malcolm S.; Ladd, Thaddeus D.

doi:10.1016/b978-0-12-803581-8.09736-8

Silicon Qubits

Journal Article · Tue Feb 27 23:00:00 EST 2018 · Library Journal

DOI:https://doi.org/10.1016/b978-0-12-803581-8.09736-8· OSTI ID:1478329

Carroll, Malcolm S. ^[1]; Ladd, Thaddeus D. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
HRL Lab. LLC, Malibu, CA (United States)

There are two good reasons to attempt to build quantum bits (qubits) out of silicon. The first is the obvious foundation of classical microelectronics. Although silicon quantum computers would operate in a fundamentally different way from classical computers$$-$$for example, at cryogenic temperatures$$-$$still the level of development in material quality, crystal growth, and fabrication methodologies for silicon is unrivaled by any other material in the world. Leveraging even a small fraction of the worldwide investment in silicon for qubit development could potentially put silicon-based qubits far ahead of other solid-state alternatives. The second, less obvious reason for choosing silicon is the remarkably clean magnetic environment witnessed by spins in highly purified and isotopically enriched silicon material. Fortuitously, 95.3% of the naturally occurring isotopes of Si nuclei (²⁸Si and ³⁰Si) are spin-0. These nuclei therefore have a “closed shell” of nuclear moments, providing no external magnetic field whatsoever. Add to this the possibility of intrinsic silicon with part-per-billion chemical quality and the system is remarkably close to “vacuum” with respect to magnetic noise properties.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1478329

Alternate ID(s):: OSTI ID: 1429799

Report Number(s):: SAND--2017-5868J; 653840; ISBN: 978-0-12-814982-9

Journal Information:: Library Journal, Journal Name: Library Journal Vol. 1; ISSN 0363-0277

Publisher:: Media Source, Inc.Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Single-spin qubits in isotopically enriched silicon at low magnetic field Zhao, R.; Tanttu, T.; Tan, K. Y. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-13416-7	journal	December 2019
Fidelity benchmarks for two-qubit gates in silicon Huang, W.; Yang, C. H.; Chan, K. W. Nature, Vol. 569, Issue 7757 https://doi.org/10.1038/s41586-019-1197-0	journal	May 2019

Figures / Tables (3)

Figure 1(p. 3)

Figure 2(p. 6)

Table 1(p. 9)

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