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Spectroscopy of Multielectrode Tunnel Barriers

Journal Article · · Physical Review Applied
 [1];  [2];  [3];  [3];  [3];  [3];  [3];  [3];  [3];  [3];  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
  2. Microsoft Research, Redmond, WA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the specific regime into which current extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multielectrode tunnel barriers, suitable for design-rules-based engineering of tunnel junctions in quantum devices. We perform transport spectroscopy at approximately T = 4 K, extracting effective barrier heights and widths for a wide range of biases, using an efficient Landauer-Büttiker tunneling model to perform the analysis. We find that the barrier height shows several regimes of voltage dependence, either linear or approximately exponential. Effects on threshold, such as metal-insulator transition and lateral confinement, are included because they influence parameters that determine barrier height and width (e.g., the Fermi energy and local electric fields). We compare these results to semiclassical solutions of Poisson’s equation and find them to agree qualitatively. Finally, this characterization technique is applied to an efficient lateral tunnel barrier design that does not require an electrode directly above the barrier region in order to estimate barrier heights and widths.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1478064
Alternate ID(s):
OSTI ID: 1478378
OSTI ID: 1478406
Report Number(s):
SAND--2018-7603J; 665778
Journal Information:
Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 10; ISSN 2331-7019; ISSN PRAHB2
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Quantum dots with split enhancement gate tunnel barrier control journal February 2019
Reduction of charge impurities in a silicon metal-oxide-semiconductor quantum dot qubit device patterned with nano-imprint lithography journal September 2019

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