Silicon photomultipliers radiation damage and recovery via high temperature annealing
Journal Article
·
· Journal of Instrumentation
- Brookhaven National Lab. (BNL), Upton, NY (United States)
The performance of Silicon Photomultipliers (SiPMs) from several vendors are characterized before and after exposure of up to 1010 neutron/cm2 dosage. Collectively, we firmly established that the typical orders of magnitude increase in dark current upon neutron irradiation can be lowered substantially after processing them with a thermal annealing procedure, and single-photon detection are to some extent recovered at room temperature. Furthermore, we found no significant difference on neutron damaged behavior when SiPMs are irradiated at room temperature or in liquid nitrogen.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1477958
- Report Number(s):
- BNL-209190-2018-JAAM
- Journal Information:
- Journal of Instrumentation, Vol. 13, Issue 10; ISSN 1748-0221
- Publisher:
- Institute of Physics (IOP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 1 work
Citation information provided by
Web of Science
Web of Science
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Silicon Photomultiplier characterization and radiation damage investigation for high energy particle physics applications
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journal | March 2014 |
Neutron radiation damage and recovery studies of SiPMs
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journal | December 2016 |
Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter
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journal | January 2013 |
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