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Title: Nanosecond Melting and Recrystallization in Shock-Compressed Silicon

Journal Article · · Physical Review Letters
 [1];  [1];  [2]
  1. Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics
  2. Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics. Dept. of Physics and Astronomy
+ Show Author Affiliations

In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ~31–33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.

Research Organization:
Washington State Univ., Pullman, WA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
Grant/Contract Number:
NA0002442; NA0002007; AC02-06CH11357
OSTI ID:
1476641
Alternate ID(s):
OSTI ID: 1473727; OSTI ID: 1476640
Journal Information:
Physical Review Letters, Vol. 121, Issue 13; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 22 works
Citation information provided by
Web of Science

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Cited By (3)

SiO 2 ‐SiC Mixtures at High Pressures and Temperatures: Implications for Planetary Bodies Containing SiC journal August 2019
Quasi-hydrostatic equation of state of silicon up to 1 megabar at ambient temperature journal October 2019
Quasi-hydrostatic equation of state of silicon up to 1 megabar at ambient temperature text January 2019

Figures / Tables (4)

Figure 1(p. 16)figure Figure 1
Figure 2(p. 17)figure Figure 2
Figure 3(p. 18)figure Figure 3
Figure 4(p. 19)figure Figure 4

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36 MATERIALS SCIENCE
mechanical & acoustical properties
phase diagrams
pressure effects
semiconductors
single crystal materials
crystal structures
X-ray diffraction