Stochastics and EUV Patterning in the 1x-nm Regime
- Center for X-ray Optics, Lawrence Berkeley National Laboratory
- EECS, University of California
The problem of stochastics in photoresist patterning is gaining increased attention. Understanding this problem requires new modeling methods. Here we describe the use of the Multivariate Poisson Propagation Model (MPPM) to study the relative importance of a variety of stochastic terms in both chemically amplified and non-chemically amplified resists. The results show that for the chemically amplified case, materials stochastic effects are on par with photon stochastics effects. The model is used to study both line-width roughness (LWR) impacts as well as contact size variations (CDU). As one might expect, contact CDU follows the same trends as LWR, but places even more sever constraints on the stochastic terms when considering the same feature size. Noting the contact patterning challenge, we also describe a phase-shift mask patterning method enabling the photon effect to be greatly reduced. At equivalent CDU, we demonstrate an effective 7x reduction in required source dose when patterning 25-nm half pitch contacts.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Materials Sciences & Engineering Division (SC-22.2)
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1474908
- Journal Information:
- Journal of Photopolymer Science and Technology, Vol. 29, Issue 6; ISSN 0914-9244
- Publisher:
- The Society of Photopolymer Science and Technology (SPST)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Enabling EUV Resist Research at the 1x and Smaller Regime
Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model