Relationship between Mobility and Lattice Strain in Electrochemically Doped Poly(3-hexylthiophene)
- Univ. of California, Berkeley, CA (United States). Dept. of Chemical and Biomolecular Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division and Joint Center for Energy Storage Research (JCESR)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Joint Center for Energy Storage Research (JCESR) and Environmental Energy Technologies Division
- Univ. of California, Berkeley, CA (United States). Dept. of Chemical and Biomolecular Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division, Environmental Energy Technologies Division and Joint Center for Energy Storage Research (JCESR)
- Univ. of California, Berkeley, CA (United States). Dept. of Chemical and Biomolecular Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division and Environmental Energy Technologies Division
Conjugated semiconducting polymers, such as poly(3-hexylthiophene) (P3HT), are poised to play an integral role in the development of organic electronic devices; however, their performance is governed by factors that are intrinsically coupled: dopant concentration, carrier mobility, crystal structure, and mesoscale morphology. We utilize synchrotron X-ray scattering and electrochemical impedance spectroscopy to probe the crystal structure and electronic properties of P3HT in situ during electrochemical doping. We also show that doping strains the crystalline domains, coincident with an exponential increase in hole mobility. We believe these observations provide guidance for the development of improved theoretical models for charge transport in semiconducting polymers.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Joint Center for Energy Storage Research (JCESR)
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1474894
- Journal Information:
- ACS Macro Letters, Vol. 4, Issue 12; Related Information: © 2015 American Chemical Society.; ISSN 2161-1653
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
Similar Records
X‐Ray Scattering Reveals Ion‐Induced Microstructural Changes During Electrochemical Gating of Poly(3‐Hexylthiophene)
Novel Effects of Compressed CO2 Molecules on Structural Ordering and Charge Transport in Conjugated Poly(3-hexylthiophene) Thin Films