Enhanced thermoelectric performance of Mg2Si1-xSnx codoped with Bi and Cr
Journal Article
·
· Physical Review B
- Indian Institute of Technology, Mumbai (India)
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
Magnesium silicides are favorable thermoelectric materials considering resource abundance and cost. Chromium (Cr) doping in magnesium silicides has not yet been explored. Using first-principles calculations, we have studied the stability of Mg2Si with chromium (1.85, 3.7, 5.55, and 6.25% Cr) and tin (12.5 and 50% Sn). Three Mg2Si compounds doped with Sn, (Sn + Bi), and (Sn + Bi + Cr) are used to explain doping effects on thermoelectric performance. Notably, Cr behaves nonmagnetically for ≤2%Cr, after which ferromagnetic ordering is favored (≤12.96% Cr), despite its elemental antiferromagnetic state. With alloying of Sn (70.4%), Mg2Si remains an indirect-band-gap semiconductor, but adding small amounts of Bi (3.7%) increases the carrier concentration such that electrons occupy conduction bands, making it a degenerate semiconductor. Mg2Si0.296Sn0.666Bi0.037 is found to give the highest thermoelectric figure of merit (ZT) and power factor (PF) at 700 K, i.e., 1.75 and 7.04 mWm–1K–2, respectively. Adding small %Cr decreases ZT and PF to 0.78 and 4.33 mWm–1K–2, respectively. Such a degradation in thermoelectric (TE) performance is attributed to two factors: (i) uniform doping acting as an electron acceptor, decreasing conduction, and (ii) the loss of low-lying conduction band degeneracy with doping, decreasing the Seebeck coefficients. In conclusion, a study of configurations of Cr doping suggests that Cr has a tendency to form clusters inside the lattice, which play a crucial role in tuning the magnetic and TE performance of doped Mg2Si compounds.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-07CH11358
- OSTI ID:
- 1477198
- Alternate ID(s):
- OSTI ID: 1471800
- Report Number(s):
- IS-J--9770
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 11 Vol. 98; ISSN 2469-9950; ISSN PRBMDO
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
High figure of merit and thermoelectric properties of Bi-doped Mg{sub 2}Si{sub 0.4}Sn{sub 0.6} solid solutions
Variations of thermoelectric properties of Mg{sub 2.2}Si{sub 1−y}Sn{sub y−0.013}Sb{sub 0.013} materials with different Si/Sn ratios
Synthesis and characterization of Bi-doped Mg{sub 2}Si thermoelectric materials
Journal Article
·
Mon Jul 15 04:00:00 UTC 2013
· Journal of Solid State Chemistry
·
OSTI ID:22309055
Variations of thermoelectric properties of Mg{sub 2.2}Si{sub 1−y}Sn{sub y−0.013}Sb{sub 0.013} materials with different Si/Sn ratios
Journal Article
·
Mon Dec 15 04:00:00 UTC 2014
· Journal of Solid State Chemistry
·
OSTI ID:22451124
Synthesis and characterization of Bi-doped Mg{sub 2}Si thermoelectric materials
Journal Article
·
Sat Sep 15 04:00:00 UTC 2012
· Journal of Solid State Chemistry
·
OSTI ID:22149815