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Persistent Charge-Density-Wave Order in Single-Layer TaSe 2

Journal Article · · Nano Letters
 [1];  [2];  [3];  [2];  [4];  [5];  [2];  [2];  [6];  [2];  [7];  [5];  [8];  [9];  [3];  [10];  [11];  [5]
  1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States; Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea; ALS, LBL
  2. Department of Physics, University of California, Berkeley, California 94720, United States
  3. Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
  4. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
  5. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
  6. Department of Physics, University of California, Berkeley, California 94720, United States; Henan Key Laboratory of Photovoltaic Materials and Laboratory of Low-dimensional Materials Science, Henan University, Kaifeng 475004, People’s Republic of China
  7. Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea; Department of Chemistry and Division of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
  8. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States; Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, United States
  9. Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea; Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
  10. Department of Physics, Pusan National University, Busan 46241, Korea
  11. Department of Physics, University of California, Berkeley, California 94720, United States; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States; Kavli Energy Nano Sciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
Understanding the collective electronic phases of two-dimensional (2D) materials requires a comprehensive investigation of the relation between lattice symmetry and electronic structure1-3. Single layers of transition metal dichalcogenides (TMDs) provide a material platform to study collective states such as charge density wave (CDW) and superconductivity4-7. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and density functional theory (DFT) calculations, we present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy (MBE). We demonstrate that 3×3 CDW order persists despite distinct changes in the low energy electronic structure highlighted by a reduction in the number of bands crossing the Fermi energy (EF) and corresponding modification of Fermi surface (FS) topology. Enhanced spin orbit coupling and lattice distortion in the single-layer limit play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the 2D limit.
Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-05CH11231; AC02-76SF00515
OSTI ID:
1471447
Alternate ID(s):
OSTI ID: 1530339
OSTI ID: 1471522
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 2 Vol. 18; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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