Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers

Crooker, Scott A.; Yang, Luyi; Robert, Cedric; Wang, Gang; Urbaszek, Bernhard; Marie, Xavier; Dey, Prasenjit

doi:10.1103/PhysRevLett.119.137401

Gate-Controlled Spin-Valley Locking of Resident Carriers in ${WSe}_{2}$ Monolayers

Journal Article · Wed Sep 27 00:00:00 EDT 2017 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.119.137401· OSTI ID:1471348

^[1]; Yang, Luyi ^[1]; Robert, Cedric ^[2]; Wang, Gang ^[2]; Urbaszek, Bernhard ^[2]; Marie, Xavier ^[2]; Dey, Prasenjit ^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. de Toulouse,Toulouse (France)

Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe₂. In the n-type regime, we observe long (~ 130 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields B_y, indicating spin relaxation. In marked contrast, extraordinarily long (~ 2 μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by B_y, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Finally, supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: European Research Council (ERC); National Science Foundation (NSF); USDOE

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1471348

Alternate ID(s):: OSTI ID: 1395189

Report Number(s):: LA-UR--17-21735

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 13 Vol. 119; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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