Effects of doping on growth in the dichlorosilane/germane system

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586826· OSTI ID:147079

Campbell, S A; Liu, W H; Leighton, J D ^[1]

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1. Univ. of Minnesota, Minneapolis, MN (United States)

The effects of diborane and arsine on Ge{sub x}Si{sub 1-x} growth rate and doping were studied in this paper. Dilute flows of diborane increased the growth rate, but had little effect on the activation energy. The growth rate of undoped films was increased linearly with germane flow then saturated, in good agreement with the literature. Under a dilute arsine flow we have observed for the first time that this description is no longer valid. The growth rate for As-doped films increases sublinearly with the germane flow, and saturates in a manner consistent with a reaction that is second order in GeH{sub 4}. The activation energy also changes from 22 (undoped) to 42 kcal/mol (doped). Possible mechanisms are discussed. The active carrier concentrations have also been measured for these doped films. Dopant incorporation in the B{sub 2}H{sup 6}/GeH{sub 4}/SiH{sub 2}Cl{sub 2} is well described by a simple kinetic model, as in silicon epitaxy. For arsenic doping with arsine, a simple kinetic model cannot be used to describe the incorporation. We believe instead that a site competition mechanism is operative. 17 refs., 8 figs.

• OSTI ID: 147079
• Report Number(s): CONF-9210296--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ARSENIC HYDRIDES
BORON HYDRIDES
CRYSTAL GROWTH
DOPED MATERIALS
GERMANIUM ALLOYS
GERMANIUM HYDRIDES
SILICON ALLOYS