Growth of AlGaAs and AlGaAs/GaAs heterostructures on misoriented (110)GaAs and a normal incidence type-II AlAs/AlGaAs quantum well infrared photodetector
- General Electric Co., Syracuse, NY (United States)
- Univ. of Florida, Gainesville, FL (United States); and others
High-quality AlGaAs and AlGaAs/GaAs heterostructures have been successfully grown on (110) GaAs at high temperatures by molecular-beam epitaxy (BE). Al{sub 0.25}Ga{sub 0.75}As/GaAs high electron mobility transistors with an 18 nm spacer layer yielded 77 K Hall electron mobilities of 6.2x10{sup 4} and 5.6x10{sup 4} cm{sup 2}/V s with sheet charge densities of 4.4x10{sup 11} and 5.5x10{sup 11} cm{sup {minus}2} at growth temperatures of 680 and 710 {degrees}C, respectively. A normal incidence type-II quantum well infrared photodetector (QWIP) using an indirect AlAs/Al{sub 0.5}Ga{sub 0.5}As system grown on misoriented (110) GaAs by MBE has been demonstrated for the first time. A peak wavelength of 12.7 {mu}m, attributed to intersubband transitions, with a cutoff wavelength of 15 {mu}m was obtained. This QWIP also showed a multispectral response from visible (0.5 {mu}m) to far-infrared wavelength (18 {mu}m). 11 refs., 4 figs.
- OSTI ID:
- 147046
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; CNN: Grant N0014-91-J-1976; TRN: 95:007540-0054
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
Similar Records
GaAs/AlGaAs quantum well infrared photoconductors versus HgCdTe photodiodes for long-wavelength infrared applications
Growth of p-type GaAs/AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy