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A Silicon Ratchet to Produce Power from Below-Bandgap Photons

Journal Article · · Advanced Energy Materials
Our work computationally demonstrates a new photovoltaic mechanism that generates power from incoherent, below-bandgap (THz) excitations of conduction band electrons in silicon. A periodic sawtooth potential, realized through elastic strain gradients along a 100 nm thick Si slab, biases the oscillatory motion of excited electrons, which preferentially jump and relax into the adjacent period on the right to generate a net current. The magnitude of the ratchet current increases with photon energy (20, 50, and 100 meV) and irradiance (≈MW cm–2), which control the probability of photon scattering, and peaks as a function of the well depth of the ratchet potential, and the dominant mode of energy loss (the 62 meV intervalley phonon). The internal power conversion efficiency of the ratchet has a maximum of 0.0083% at a photon energy of 100 meV, due to inefficiencies caused by isotropic scattering. This new photovoltaic mechanism uses wasted below-bandgap absorptions to enhance the directional diffusion of charge carriers and could be utilized to augment the efficiency of traditional photovoltaics.
Research Organization:
Northwestern Univ., Evanston, IL (United States). Energy Frontier Research Center (EFRC) Center for Bio-Inspired Energy Science (CBES)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0000989
OSTI ID:
1469980
Alternate ID(s):
OSTI ID: 1375821
Journal Information:
Advanced Energy Materials, Journal Name: Advanced Energy Materials Journal Issue: 22 Vol. 7; ISSN 1614-6832
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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