Enabling Efficient Creation of Long-Lived Charge-Separation on Dye-Sensitized NiO Photocathodes
Journal Article
·
· ACS Applied Materials and Interfaces
- Univ. of North Carolina, Chapel Hill, NC (United States)
The hole-injection and recombination photophysics for NiO sensitized with RuP ([RuII(bpy)2(4,4'-(PO3H2)2-bpy)]2+) are explored. Ultrafast transient absorption (TA) measurements performed with an external electrochemical bias reflect the efficiency for productive hole-injection, that is, quenching of the dye excited state that results in a detectable charge-separated electron–hole pair, is linearly dependent on the electronic occupation of intragap states in the NiO film. Population of these states via a negative applied potential increases the efficiency from 0% to 100%. The results indicate the primary loss mechanism for dye-sensitized NiO is rapid nongeminate recombination enabled by the presence of latent holes in the surface of the NiO film. Our results indicate a new design paradigm for NiO photocathodes and devices centered on the avoidance of this recombination pathway.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar Fuels (UNC EFRC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0001011
- OSTI ID:
- 1469824
- Journal Information:
- ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 32 Vol. 9; ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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