Aligned van der Waals Coupled Growth of Carbon Nanotubes to Hexagonal Boron Nitride

Nasseri, Mohsen; Ansary, Armin; Boland, Mathias J.; Strachan, Douglas R.

doi:10.1002/admi.201800793

Title: Aligned van der Waals Coupled Growth of Carbon Nanotubes to Hexagonal Boron Nitride

Journal Article · Wed Sep 12 00:00:00 EDT 2018 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201800793· OSTI ID:1469724

Nasseri, Mohsen ^[1]; Ansary, Armin ^[1]; Boland, Mathias J. ^[1];

^[1]

Department of Physics and Astronomy University of Kentucky Lexington KY 40506 USA

Abstract 1D carbon nanotubes (CNTs) are grown on hexagonal boron nitride (hBN) surfaces. The nanotubes show clear preference to align to specific crystal directions of the hBN substrate. Raman spectra confirm that the nanotubes consist of sp ² carbon, while nanomanipulation shows that they are van der Waals coupled to the underlying hBN substrate. Scanning conductance and electric force microscopy show that the CNTs have significantly greater electrical conductance compared to the hBN. This integrated aligned growth of materials with similar lattices, yet having dissimilar dimensionality and electrical conducting properties, provides a promising route to achieving intricate nanoscale electrical circuits on high‐quality insulating substrates.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: 0000223282

OSTI ID:: 1469724

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Vol. 5 Journal Issue: 21; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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