Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

Park, Young-Shin; Lim, Jaehoon; Makarov, Nikolay Sergeevich; Klimov, Victor Ivanovich

doi:10.1021/acs.nanolett.7b02438

Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

Journal Article · Thu Jul 27 00:00:00 EDT 2017 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.7b02438· OSTI ID:1469533

^[1]; ^[1]; Makarov, Nikolay Sergeevich ^[2]; ^[2]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Auger recombination is a nonradiative three-particle process wherein the electron–hole recombination energy dissipates as a kinetic energy of a third carrier. Auger decay is enhanced in quantum-dot (QD) forms of semiconductor materials compared to their bulk counterparts. Because this process is detrimental to many prospective applications of the QDs, the development of effective approaches for suppressing Auger recombination has been an important goal in the QD field. One such approach involves “smoothing” of the confinement potential, which suppresses the intraband transition involved in the dissipation of the electron–hole recombination energy. Here, the present study evaluates the effect of increasing “smoothness” of the confinement potential on Auger decay employing a series of CdSe/CdS-based QDs wherein the core and the shell are separated by an intermediate layer of a CdSe_xS_1–x alloy comprised of 1–5 sublayers with a radially tuned composition. As inferred from single-dot measurements, use of the five-step grading scheme allows for strong suppression of Auger decay for both biexcitons and charged excitons. Further, due to nearly identical emissivities of neutral and charged excitons, these QDs exhibit an interesting phenomenon of lifetime blinking for which random fluctuations of a photoluminescence lifetime occur for a nearly constant emission intensity.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Chemical Sciences, Geosciences & Biosciences Division

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1469533

Report Number(s):: LA-UR--17-26004

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 9 Vol. 17; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots

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