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Title: Chemically induced large-gap quantum anomalous Hall insulator states in III-Bi honeycombs

Journal Article · · npj Computational Materials
 [1];  [1];  [1]; ORCiD logo [2];  [3];  [4]
  1. National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Physics
  2. National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Physics and Multidisciplinary and Data Science Research Center
  3. National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research Centre and Dept. of Physics
  4. Northeastern Univ., Boston, MA (United States). Dept. of Physics

The search for novel materials with new functionalities and applications potential is continuing to intensify. Quantum anomalous Hall (QAH) effect was recently realized in magnetic topological insulators (TIs) but only at extremely low temperatures. Here, based on our first-principles electronic structure calculations, we predict that chemically functionalized III-Bi honeycombs can support large-gap QAH insulating phases. Specifically, we show that functionalized AlBi and TlBi films harbor QAH insulator phases. GaBi and InBi are identified as semimetals with non-zero Chern number. Remarkably, TlBi exhibits a robust QAH phase with a band gap as large as 466 meV in a buckled honeycomb structure functionalized on one side. Furthermore, the electronic spectrum of a functionalized TlBi nanoribbon with zigzag edge is shown to possess only one chiral edge band crossing the Fermi level within the band gap. Finally, our results suggest that III-Bi honeycombs would provide a new platform for developing potential spintronics applications based on the QAH effect.

Research Organization:
Northeastern Univ., Boston, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM); Energy Frontier Research Centers (EFRC) (United States). Center for Complex Materials from First Principles (CCM); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States) National Energy Research Scientific Computing Center
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-07ER46352; AC02-05CH11231; SC0012575
OSTI ID:
1466811
Alternate ID(s):
OSTI ID: 1490211
Journal Information:
npj Computational Materials, Vol. 3, Issue 1; ISSN 2057-3960
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

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Cited By (4)

Honeycomb recipe journal November 2017
Chern insulator with a nearly flat band in the metal-organic-framework-based Kagome lattice journal September 2019
Topological phase transition and tunable electronic properties of hydrogenated bismuthene: from single-layer to double-layer journal October 2019
Prediction of Quantum Anomalous Hall Effect in MBi and MSb (M:Ti, Zr, and Hf) Honeycombs journal February 2018

Figures / Tables (8)


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