Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe

Zhang, Cheng; He, Xu-Gang; Chi, Hang; Zhong, Ruidan; Ku, Wei; Gu, Genda; Tranquada, J. M.; Li, Qiang

doi:10.1103/PhysRevB.98.054503

Title: Electron and hole contributions to normal-state transport in the superconducting system ${Sn}_{1 - x} {In}_{x} Te$

Journal Article · Thu Aug 09 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.98.054503· OSTI ID:1466623

Zhang, Cheng ^[1]; He, Xu-Gang ^[1]; Chi, Hang ^[2]; Zhong, Ruidan ^[1]; Ku, Wei ^[2]; Gu, Genda ^[2]; Tranquada, J. M. ^[2]; Li, Qiang ^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn_1-xIn_xTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1466623

Alternate ID(s):: OSTI ID: 1463759

Report Number(s):: BNL-207980-2018-JAAM; PRBMDO

Journal Information:: Physical Review B, Vol. 98, Issue 5; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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Superconductivity of Topological Surface States and Strong Proximity Effect in Sn ₁₋ _x Pb _x Te–Pb Heterostructures Yang, Hao; Li, Yao‐Yi; Liu, Teng‐Teng Advanced Materials, Vol. 31, Issue 52 https://doi.org/10.1002/adma.201905582	journal	November 2019
Band structure engineering in Sn _1.03 Te through an In-induced resonant level Misra, Shantanu; Wiendlocha, Bartlomiej; Tobola, Janusz Journal of Materials Chemistry C, Vol. 8, Issue 3 https://doi.org/10.1039/c9tc04407h	journal	January 2020
Superconductivity of Topological Surface States and Strong Proximity Effect in Sn _1–x Pb _x Te‐Pb Heterostructures Yang, Hao; Li, Yao‐Yi; Liu, Teng‐Teng Advanced Materials, Vol. 32, Issue 38 https://doi.org/10.1002/adma.202003054	journal	September 2020

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Title: Electron and hole contributions to normal-state transport in the superconducting system Sn 1 - x In x Te

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Title: Electron and hole contributions to normal-state transport in the superconducting system ${Sn}_{1 - x} {In}_{x} Te$