Probing carbon impurities in hexagonal boron nitride epilayers

Uddin, M. R.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4982647

Title: Probing carbon impurities in hexagonal boron nitride epilayers

Journal Article · Tue May 02 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4982647· OSTI ID:1466211

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Texas Tech Univ., Lubbock, TX (United States). Dept. of Electrical and Computer Engineering

In this paper, carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (C_B, carbon impurities occupying boron sites), and substitutional acceptors (C_N, carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of C_B donors in h-BN is E_D ~ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42–6.45 eV, and the C_N deep acceptors have an energy level of about 2.2–2.3 eV. Finally, the results also infer that carbon doping introduces both shallow donors (C_B) and deep acceptors (C_N) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.

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Research Organization:: Texas Tech Univ., Lubbock, TX (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO)

Grant/Contract Number:: NA0002927; W911NF-16-1-0268

OSTI ID:: 1466211

Alternate ID(s):: OSTI ID: 1361858

Journal Information:: Applied Physics Letters, Vol. 110, Issue 18; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 31 works

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