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Pressure-induced structural transition in chalcopyrite ZnSiP2

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4981889· OSTI ID:1466210
 [1];  [2];  [2];  [3];  [4];  [4];  [5]
  1. Carnegie Inst. for Science, Washington, DC (United States). Geophysical Lab.; Carnegie Institution of Washington
  2. Colorado School of Mines, Golden, CO (United States). Dept. of Physics
  3. Carnegie Inst. of Washington, Argonne, IL (United States). High Pressure Collaborative Access Team (HPCAT). Geophysical Lab.
  4. Univ. of Chicago, IL (United States). Center for Advanced Radiation Sources
  5. Carnegie Inst. for Science, Washington, DC (United States). Geophysical Lab.
In this paper, the pressure-dependent phase behavior of semiconducting chalcopyrite ZnSiP2 was studied up to 30 GPa using in situ X-ray diffraction and Raman spectroscopy in a diamond-anvil cell. A structural phase transition to the rock salt type structure was observed between 27 and 30 GPa, which is accompanied by soft phonon mode behavior and simultaneous loss of Raman signal and optical transmission through the sample. The high-pressure rock salt type phase possesses cationic disorder as evident from broad features in the X-ray diffraction patterns. The behavior of the low-frequency Raman modes during compression establishes a two-stage, order-disorder phase transition mechanism. Finally, the phase transition is partially reversible, and the parent chalcopyrite structure coexists with an amorphous phase upon slow decompression to ambient conditions.
Research Organization:
Carnegie Inst. for Science, Washington, DC (United States); Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree); Univ. of Chicago, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF) (United States); USDOE; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-06CH11357; FG02-94ER14466; FG02-99ER45775; NA0001974; SC0001057
OSTI ID:
1466210
Alternate ID(s):
OSTI ID: 1355051
OSTI ID: 1361842
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 110; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (4)

MgSiAs: An Unexplored System with Promising Nonlinear Optical Properties journal May 2018
A new family of cation-disordered Zn(Cu)–Si–P compounds as high-performance anodes for next-generation Li-ion batteries journal January 2019
Pressure-induced structural and electronic transitions in kesterite-type Cu 2 ZnSnS 4 journal August 2018
The pressure-effects on phase transitions, band structures, electronic and elastic properties of ternary compounds ZnXP 2 (X = Si, Ge, Sn) by first principle calculations journal September 2018

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