Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications

Dugu, Sita; Pavunny, Shojan P.; Scott, James F.; Katiyar, Ram S.

doi:10.1063/1.4968185

Title: Si:SrTiO₃-Al₂O₃-Si:SrTiO₃ multi-dielectric architecture for metal-insulator-metal capacitor applications

Journal Article · Tue Nov 22 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4968185· OSTI ID:1465949

^[1];

^[2]; Katiyar, Ram S. ^[1]

Univ. of Puerto Rico, San Juan, PR (United States). Department of Physics and Institute for Functional Nanomaterials
Univ. of Puerto Rico, San Juan, PR (United States). Department of Physics and Institute for Functional Nanomaterials; Univ. of St. Andrews, Scotland (United Kingdom). School of Chemistry and Physics

We present that metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO₃-Al₂O₃-Si:SrTiO₃ multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200–400 K) and electric field stress (61.5 MV/cm). A high capacitance density of 31 fF/μm², a low voltage coefficient of capacitance of 363 ppm/V², a low temperature coefficient of capacitance of <644 ppm/K, and an effective dielectric constant of 133 are demonstrated in a MIM capacitor with 1.4 nm capacitance equivalent thickness in a 40 nm thick ultra high-k multi-dielectric stack. Finally, all of these properties make this dielectric architecture of interest for next generation, highly scaled MIM capacitor applications.

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Research Organization:: Univ. of Puerto Rico, San Juan, PR (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-08ER46526

OSTI ID:: 1465949

Alternate ID(s):: OSTI ID: 1333015

Journal Information:: Applied Physics Letters, Vol. 109, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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Title: Si:SrTiO₃-Al₂O₃-Si:SrTiO₃ multi-dielectric architecture for metal-insulator-metal capacitor applications