Large-area and bright pulsed electroluminescence in monolayer semiconductors

Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

doi:10.1038/s41467-018-03218-8

Title: Large-area and bright pulsed electroluminescence in monolayer semiconductors

Journal Article · Mon Mar 26 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-03218-8· OSTI ID:1465474

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Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences
King Abdullah Univ. of Science & Technology (KAUST), Thuwal (Saudi Arabia). Computer, Electrical and Mathematical Sciences and Engineering Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. Here, we demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS₂, WS₂, MoSe₂, and WSe₂) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: AC02-05CH11231; 1623038

OSTI ID:: 1465474

Journal Information:: Nature Communications, Vol. 9, Issue 1; Related Information: © 2018 The Author(s).; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 124 works

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