Crystallographic Orientation Image Mapping with Multiple Detector Configurations at 30 ? 300 kV.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1464874
- Report Number(s):
- SAND2017-8563C; 656149
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of Grain Growth and Deformation in Nanocrystalline Metals: In-situ TEM Mechanical Testing and Crystallographic Orientation Mapping.
Investigation of Grain Growth in Nanocrystalline Alloys through Coupled In-situ TEM Fatigue and Crystallographic Orientation Mapping.
Influence of Crystallographic Orientation and Anisotropy on Kapitza Conductance.
Conference
·
Tue Aug 01 00:00:00 EDT 2017
·
OSTI ID:1464873
Investigation of Grain Growth in Nanocrystalline Alloys through Coupled In-situ TEM Fatigue and Crystallographic Orientation Mapping.
Conference
·
Wed Feb 28 23:00:00 EST 2018
·
OSTI ID:1502696
Influence of Crystallographic Orientation and Anisotropy on Kapitza Conductance.
Conference
·
Sun Apr 01 00:00:00 EDT 2012
·
OSTI ID:1074012