The impact of annealing on the properties of p-type Bi0.4Sb1.6Te3 films.
Conference
·
OSTI ID:1463403
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1463403
- Report Number(s):
- SAND2017-8072C; 655772
- Country of Publication:
- United States
- Language:
- English
Similar Records
ZnTe:Cu Film Properties and Their Impact on CdS/CdTe Devices
High-Temperature Annealing of Sputtered ScAlN Films for Lattice-Matched AlGaN Epitaxy.
Characteristic Transconductance of P-Type and N-Type Deeply Depleted Graphene-Insulator-Semiconductor Junction Photodetectors.
Conference
·
Tue Dec 31 23:00:00 EST 2013
·
OSTI ID:1168797
High-Temperature Annealing of Sputtered ScAlN Films for Lattice-Matched AlGaN Epitaxy.
Conference
·
Mon Jul 01 00:00:00 EDT 2019
·
OSTI ID:1641404
Characteristic Transconductance of P-Type and N-Type Deeply Depleted Graphene-Insulator-Semiconductor Junction Photodetectors.
Conference
·
Sun Jul 01 00:00:00 EDT 2018
·
OSTI ID:1532452