Monolithically integrated infrared transceiver

Wanke, Michael; Nordquist, Christopher; Lee, Mark

Monolithically integrated infrared transceiver

Patent · Tue Jul 10 00:00:00 EDT 2018

OSTI ID:1462197

Wanke, Michael; Nordquist, Christopher; Lee, Mark

A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

Research Organization:: National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Number(s):: 10,020,634

Application Number:: 14/575,430

OSTI ID:: 1462197

Country of Publication:: United States

Language:: English

References (9)

Cutoff Frequency of Submillimeter Schottky-Barrier Diodes Champlin, K. S.; Eisenstein, G. IEEE Transactions on Microwave Theory and Techniques, Vol. 26, Issue 1, p. 31-34 https://doi.org/10.1109/TMTT.1978.1129302	journal	January 1978
Frequency measurement chain to 30 THz using FIR schottky diodes and a submillimeter backward wave oscillator Weiss, C. O. Applied Physics B Photophysics and Laser Chemistry, Vol. 34, Issue 2, p. 63-67 https://doi.org/10.1007/BF00697949	journal	June 1984
Experimental investigation of Schottky barrier diodes as nonlinear elements in 800-nm-wavelength region Chepurov, S. V.; Klementyev, V. M.; Kuznetsov, S. À. Applied Physics B, Vol. 79, Issue 1, p. 33-38 https://doi.org/10.1007/s00340-004-1520-8	journal	July 2004
Video detection and mixing performance of GaAs Schottky‐barrier diodes at 30 THz and comparison with metal‐insulator‐metal diodes Hübers, H.‐W.; Schwaab, G. W.; Röser, H. P. Journal of Applied Physics, Vol. 75, Issue 8, p. 4243-4248 https://doi.org/10.1063/1.355980	journal	April 1994
GaAs Schottky diodes for THz mixing applications Crowe, T. W.; Mattauch, R. J.; Roser, H. P. Proceedings of the IEEE, Vol. 80, Issue 11, p. 1827-1841 https://doi.org/10.1109/5.175258	journal	January 1992
Monolithically integrated solid-state terahertz transceivers Wanke, Michael C.; Young, Erik W.; Nordquist, Christopher D. Nature Photonics, Vol. 4, Issue 8, p. 565-569 https://doi.org/10.1038/nphoton.2010.137	journal	June 2010
Terahertz semiconductor-heterostructure lasers Kohler, R.; Tredicucci, A.; Beltram, F. Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02 https://doi.org/10.1109/CLEO.2002.1034500	conference	January 2002
A W–InSb point contact diode for harmonic generation and mixing in the visible Moretti, A.; Maccioni, E.; Nannizzi, M. Review of Scientific Instruments, Vol. 71, Issue 2, p. 585-586 https://doi.org/10.1063/1.1150438	journal	February 2000
Terahertz semiconductor-heterostructure laser Köhler, Rüdeger; Tredicucci, Alessandro; Beltram, Fabio Nature, Vol. 417, Issue 6885 https://doi.org/10.1038/417156a	journal	May 2002

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