Frequency dependent polarisation switching in h-ErMnO3

Ruff, Alexander; Li, Ziyu; Loidl, Alois; Schaab, Jakob; Fiebig, Manfred; Cano, Andres; Yan, Zewu; Bourret, Edith; Glaum, Julia; Meier, Dennis; Krohns, Stephan

doi:10.1063/1.5026732

Frequency dependent polarisation switching in h-ErMnO₃

Journal Article · Thu May 03 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5026732· OSTI ID:1461985

Ruff, Alexander ^[1]; Li, Ziyu ^[1]; ^[1]; Schaab, Jakob ^[2]; Fiebig, Manfred ^[2]; Cano, Andres ^[3]; ^[4]; ^[5]; Glaum, Julia ^[6]; Meier, Dennis ^[6]; ^[1]

Univ. of Augsburg (Germany). Experimental Physics V. Center for Electronic Correlation and Magnetism
Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Dept. of Materials
Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Dept. of Materials; Univ. Grenoble Alpes (France). Inst. Néel
Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Norwegian Univ. of Science and Technology, Trondheim (Norway). Dept. of Materials Science and Engineering

We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO₃. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO₃ exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5–6 μC/cm². Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: European Commission (EC); European Research Council (ERC); Federal Ministry of Education and Research (BMBF) (Germany); German Research Foundation (DFG); Swiss National Science Foundation (SNSF) (Switzerland); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1461985

Alternate ID(s):: OSTI ID: 1435863

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 112; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Ferroelectricity and magnetoelectric coupling in hexagonal Lu _0.5 In _0.5 FeO ₃ ceramics Liu, Mei Ying; Gao, Ting Ting; Zhu, Xiao Li Journal of Applied Physics, Vol. 126, Issue 16 https://doi.org/10.1063/1.5117344	journal	October 2019
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