Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Hahn, W.; Lentali, J. -M.; Polovodov, P.; Young, N.; Nakamura, S.; Speck, J. S.; Weisbuch, C.; Filoche, M.; Wu, Y. -R.; Piccardo, M.; Maroun, F.; Martinelli, L.; Lassailly, Y.; Peretti, Jacques

doi:10.1103/PhysRevB.98.045305

Title: Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Journal Article · Thu Jul 19 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.98.045305· OSTI ID:1635231

Hahn, W. ^[1]; Lentali, J. -M. ^[2]; Polovodov, P. ^[2]; Young, N. ^[3]; Nakamura, S. ^[3]; Speck, J. S. ^[3]; Weisbuch, C. ^[4]; Filoche, M. ^[2]; Wu, Y. -R. ^[5]; Piccardo, M. ^[2]; Maroun, F. ^[2]; Martinelli, L. ^[2]; Lassailly, Y. ^[2]; Peretti, Jacques ^[2]

Université Paris Saclay, Palaiseau Cedex (France); Technische Universität Dortmund (Germany)
Université Paris Saclay, Palaiseau Cedex (France)
Univ. of California, Santa Barbara, CA (United States)
Université Paris Saclay, Palaiseau Cedex (France) ; Univ. of California, Santa Barbara, CA (United States)
National Taiwan University, Taipei (Taiwan)

We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. In conclusion, the energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Contributing Organization:: Ecole Polytechnique Paris National Taiwan University

Grant/Contract Number:: EE0007096

OSTI ID:: 1635231

Alternate ID(s):: OSTI ID: 1461006

Journal Information:: Physical Review B, Vol. 98, Issue 4; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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References (32)

Universal mechanism for Anderson and weak localization Filoche, M.; Mayboroda, S. Proceedings of the National Academy of Sciences, Vol. 109, Issue 37 https://doi.org/10.1073/pnas.1120432109	journal	August 2012
Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy Mensi, Mounir; Ivanov, Ruslan; Uždavinys, Tomas K. ACS Photonics, Vol. 5, Issue 2 https://doi.org/10.1021/acsphotonics.7b01061	journal	November 2017
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Li, Chi-Kang; Piccardo, Marco; Lu, Li-Shuo Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144206	journal	April 2017
Impact of Radiative and Nonradiative Recombination Processes on the Efficiency-Droop Phenomenon in ${In}_{x} {Ga}_{1 - x} N$ Single Quantum Wells Studied by Scanning Near-Field Optical Microscopy Kawakami, Yoichi; Kaneta, Akio; Hashiya, Akira Physical Review Applied, Vol. 6, Issue 4 https://doi.org/10.1103/PhysRevApplied.6.044018	journal	October 2016
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Piccardo, Marco; Li, Chi-Kang; Wu, Yuh-Renn Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144205	journal	April 2017
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells Schulz, Stefan; Caro, Miguel A.; Coughlan, Conor Physical Review B, Vol. 91, Issue 3 https://doi.org/10.1103/PhysRevB.91.035439	journal	January 2015
Localization landscape theory of disorder in semiconductors. I. Theory and modeling Filoche, Marcel; Piccardo, Marco; Wu, Yuh-Renn Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144204	journal	April 2017
Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot Holmes, Mark J.; Choi, Kihyun; Kako, Satoshi Nano Letters, Vol. 14, Issue 2 https://doi.org/10.1021/nl404400d	journal	January 2014
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy Piccardo, Marco; Martinelli, Lucio; Iveland, Justin Physical Review B, Vol. 89, Issue 23 https://doi.org/10.1103/PhysRevB.89.235124	journal	June 2014
Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia Applied Physics Letters, Vol. 107, Issue 25 https://doi.org/10.1063/1.4938208	journal	December 2015
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S. Journal of Applied Physics, Vol. 116, Issue 11 https://doi.org/10.1063/1.4896103	journal	September 2014
Effective Confining Potential of Quantum States in Disordered Media Arnold, Douglas N.; David, Guy; Jerison, David Physical Review Letters, Vol. 116, Issue 5 https://doi.org/10.1103/PhysRevLett.116.056602	journal	February 2016
Scanning Tunneling Luminescence Studies of Nitride Semiconductor Thin Films under Ambient Conditions Manson-Smith, S. K.; Trager-Cowan, C.; O'Donnell, K. P. physica status solidi (b), Vol. 228, Issue 2 https://doi.org/10.1002/1521-3951(200111)228:2%3C445::AID-PSSB445%3E3.0.CO;2-I	journal	November 2001
Spatially resolved cathodoluminescence spectra of InGaN quantum wells Chichibu, Shigefusa; Wada, Kazumi; Nakamura, Shuji Applied Physics Letters, Vol. 71, Issue 16 https://doi.org/10.1063/1.120025	journal	October 1997
Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy Marcinkevičius, Saulius; Uždavinys, Tomas K.; Foronda, Humberto M. Physical Review B, Vol. 94, Issue 23 https://doi.org/10.1103/PhysRevB.94.235205	journal	December 2016
Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well Evoy, S.; Harnett, C. K.; Craighead, H. G. Applied Physics Letters, Vol. 74, Issue 10 https://doi.org/10.1063/1.123580	journal	March 1999
Mapping quantum-well energy profiles of III-V heterostructures by scanning-tunneling-microscope-excited luminescence Renaud, Philippe; Alvarado, Santos F. Physical Review B, Vol. 44, Issue 12 https://doi.org/10.1103/PhysRevB.44.6340	journal	September 1991
Polarization-Resolved Near-Field Spectroscopy of Localized States in $m$ -Plane ${In}_{x} {Ga}_{1 - x} N / Ga N$ Quantum Wells Ivanov, Ruslan; Marcinkevičius, Saulius; Mensi, Mounir D. Physical Review Applied, Vol. 7, Issue 6 https://doi.org/10.1103/PhysRevApplied.7.064033	journal	June 2017
Tunnel-induced photon emission in semiconductors using an STM Samuelson, L.; Lindahl, J.; Montelius, L. Physica Scripta, Vol. T42 https://doi.org/10.1088/0031-8949/1992/T42/026	journal	January 1992
Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity Tereshchenko, O. E.; Shaibler, G. É.; Yaroshevich, A. S. Physics of the Solid State, Vol. 46, Issue 10 https://doi.org/10.1134/1.1809437	journal	October 2004
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching Visconti, P.; Jones, K. M.; Reshchikov, M. A. Applied Physics Letters, Vol. 77, Issue 22 https://doi.org/10.1063/1.1329330	journal	November 2000
Optical phonon‐assisted tunneling in double quantum well structures Oberli, D. Y.; Shah, Jagdeep; Damen, T. C. Applied Physics Letters, Vol. 56, Issue 13 https://doi.org/10.1063/1.102525	journal	March 1990
Efficiency Drop in Green $InGaN / GaN$ Light Emitting Diodes: The Role of Random Alloy Fluctuations Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele Physical Review Letters, Vol. 116, Issue 2 https://doi.org/10.1103/PhysRevLett.116.027401	journal	January 2016
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung Applied Physics Letters, Vol. 101, Issue 8 https://doi.org/10.1063/1.4747532	journal	August 2012
Time-of-flight measurements of charge carrier diffusion in In $_{x}$ Ga $_{1 - x}$ N/GaN quantum wells Danhof, J.; Schwarz, U. T.; Kaneta, A. Physical Review B, Vol. 84, Issue 3 https://doi.org/10.1103/PhysRevB.84.035324	journal	July 2011
Carrier localization mechanisms in In $_{x}$ Ga $_{1 - x}$ N/GaN quantum wells Watson-Parris, D.; Godfrey, M. J.; Dawson, P. Physical Review B, Vol. 83, Issue 11 https://doi.org/10.1103/PhysRevB.83.115321	journal	March 2011
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells Sonderegger, S.; Feltin, E.; Merano, M. Applied Physics Letters, Vol. 89, Issue 23 https://doi.org/10.1063/1.2397562	journal	December 2006
Tunneling process in AlAs/GaAs double quantum wells studied by photoluminescence Tada, Tetsuya; Yamaguchi, Atsushi; Ninomiya, Toshiyuki Journal of Applied Physics, Vol. 63, Issue 11 https://doi.org/10.1063/1.340374	journal	June 1988
Studies of exciton localization in quantum-well structures by nonlinear-optical techniques Hegarty, J.; Sturge, M. D. Journal of the Optical Society of America B, Vol. 2, Issue 7 https://doi.org/10.1364/JOSAB.2.001143	journal	January 1985
Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy Okamoto, Koichi; Choi, Jungkwon; Kawakami, Yoichi Japanese Journal of Applied Physics, Vol. 43, Issue 2 https://doi.org/10.1143/JJAP.43.839	journal	February 2004
Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution Prietsch, Mario Physics Reports, Vol. 253, Issue 4 https://doi.org/10.1016/0370-1573(94)00082-E	journal	March 1995

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Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN Kravcov, O.; Mickevičius, J.; Tamulaitis, G. Journal of Physics: Condensed Matter, Vol. 32, Issue 14 https://doi.org/10.1088/1361-648x/ab61cb	journal	January 2020

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