Development of High Electronic Quality CdTe Films Required for 1 Volt VOC CdTe Cells
- Univ. of South Florida, Tampa, FL (United States)
The main goal of this project was to develop an understanding of the role of point defects and demonstrate control of the doping process in thin films of CdTe, using a deposition process that can create conditions favorable for extrinsic (mainly group V) dopant incorporation. The project’s two key objectives were to demonstrate: (a) doping concentrations in p-CdTe above 1016 cm-3, and (b) lifetimes greater than 2 ns. Device modeling suggests that both these conditions are required to achieve VOC’s of 1.0 Volt in thin film CdTe cells a long-sought objective of the CdTe thin film community. The process utilized for the deposition of the CdTe thin films is unique in that it can be used to create Cd- or Te-rich conditions (or stoichiometric) in order to favor the formation of certain native defects (i.e. Cd or Te vacancies). All significant accomplishments clearly pointed to the impact of deposition conditions on the formation of defects in CdTe thin films.
- Research Organization:
- Univ. of South Florida, Tampa, FL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Contributing Organization:
- National Renewable Energy Laboratory
- DOE Contract Number:
- EE0005401
- OSTI ID:
- 1460533
- Report Number(s):
- DE-EE0005401
- Country of Publication:
- United States
- Language:
- English
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