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Title: Analysis of the IBL and LBNL irradiated PIN and PN diodes.

Abstract

Abstract not provided.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1459608
Report Number(s):
SAND2018-7095R
665364
DOE Contract Number:
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English

Citation Formats

Vizkelethy, Gyorgy, Bielejec, Edward S., and Aguirre, Brandon Adrian. Analysis of the IBL and LBNL irradiated PIN and PN diodes.. United States: N. p., 2018. Web. doi:10.2172/1459608.
Vizkelethy, Gyorgy, Bielejec, Edward S., & Aguirre, Brandon Adrian. Analysis of the IBL and LBNL irradiated PIN and PN diodes.. United States. doi:10.2172/1459608.
Vizkelethy, Gyorgy, Bielejec, Edward S., and Aguirre, Brandon Adrian. Sun . "Analysis of the IBL and LBNL irradiated PIN and PN diodes.". United States. doi:10.2172/1459608. https://www.osti.gov/servlets/purl/1459608.
@article{osti_1459608,
title = {Analysis of the IBL and LBNL irradiated PIN and PN diodes.},
author = {Vizkelethy, Gyorgy and Bielejec, Edward S. and Aguirre, Brandon Adrian},
abstractNote = {Abstract not provided.},
doi = {10.2172/1459608},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jul 01 00:00:00 EDT 2018},
month = {Sun Jul 01 00:00:00 EDT 2018}
}

Technical Report:

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