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Title: Analysis of the IBL and LBNL irradiated PIN and PN diodes

Abstract

This report is a follow-up to the previous report on the difference between high fluence, high and low flux irradiations. There was a discrepancy in the data for the LBNL irradiated S5821 PIN diodes. There were diodes irradiated in the two batches (high and low flux) with the same flux and fluence for reference (lell ions/cm 2/shot and 5, 10, and 20 ions/cm 2 total flux). Although these diodes should have the same electrical characteristics their leakage currents were different by a factor of 5-6 (batch 2 was larger). Also, the C-V measurements showed drastically different results. It was speculated that these discrepancies were due to one of the following two reasons: 1. Different times elapsed between radiation and characterization. 2. Different areas were irradiated (roughly half of the diodes were covered during irradiation). To address the first concern, we annealed the devices according to the ASTM standard [1]. The differences remained the same. To determine the irradiated area, we performed large area IBIC scans on several devices. Error! Reference source not found. below shows the IBIC maps of two devices one from each batch. The irradiated areas are approximately the same.

Authors:
 [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1459608
Report Number(s):
SAND2018-7095R
665364
DOE Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Vizkelethy, Gyorgy, Aguirre, Brandon Adrian, and Bielejec, Edward S. Analysis of the IBL and LBNL irradiated PIN and PN diodes. United States: N. p., 2018. Web. doi:10.2172/1459608.
Vizkelethy, Gyorgy, Aguirre, Brandon Adrian, & Bielejec, Edward S. Analysis of the IBL and LBNL irradiated PIN and PN diodes. United States. doi:10.2172/1459608.
Vizkelethy, Gyorgy, Aguirre, Brandon Adrian, and Bielejec, Edward S. Sun . "Analysis of the IBL and LBNL irradiated PIN and PN diodes". United States. doi:10.2172/1459608. https://www.osti.gov/servlets/purl/1459608.
@article{osti_1459608,
title = {Analysis of the IBL and LBNL irradiated PIN and PN diodes},
author = {Vizkelethy, Gyorgy and Aguirre, Brandon Adrian and Bielejec, Edward S.},
abstractNote = {This report is a follow-up to the previous report on the difference between high fluence, high and low flux irradiations. There was a discrepancy in the data for the LBNL irradiated S5821 PIN diodes. There were diodes irradiated in the two batches (high and low flux) with the same flux and fluence for reference (lell ions/cm2/shot and 5, 10, and 20 ions/cm2 total flux). Although these diodes should have the same electrical characteristics their leakage currents were different by a factor of 5-6 (batch 2 was larger). Also, the C-V measurements showed drastically different results. It was speculated that these discrepancies were due to one of the following two reasons: 1. Different times elapsed between radiation and characterization. 2. Different areas were irradiated (roughly half of the diodes were covered during irradiation). To address the first concern, we annealed the devices according to the ASTM standard [1]. The differences remained the same. To determine the irradiated area, we performed large area IBIC scans on several devices. Error! Reference source not found. below shows the IBIC maps of two devices one from each batch. The irradiated areas are approximately the same.},
doi = {10.2172/1459608},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jul 01 00:00:00 EDT 2018},
month = {Sun Jul 01 00:00:00 EDT 2018}
}

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