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Co6Se8(PEt3)6 superatoms as tunable chemical dopants for two-dimensional semiconductors

Journal Article · · npj Computational Materials
Abstract

Electronic, optoelectronic, and other functionalities of semiconductors are controlled by the nature and density of carriers, and the location of the Fermi energy. Developing strategies to tune these parameters holds the key to precise control over semiconductors properties. We propose that ligand exchange on superatoms can offer a systematic strategy to vary these properties. We demonstrate this by considering a WSe 2 surface doped with ligated metal chalcogenide Co 6 Se 8 (PEt 3 ) 6 clusters. These superatoms are characterized by valence quantum states that can readily donate multiple electrons. We find that the WSe 2 support binds more strongly to the Co 6 Se 8 cluster than the PEt 3 ligand, so ligand exchange between the phosphine ligand and the WSe 2 support is energetically favorable. The metal chalcogenide superatoms serves as a donor that may transform the WSe 2 p-type film into an n-type semiconductor. The theoretical findings complement recent experiments where WSe 2 films with supported Co 6 Se 8 (PEt 3 ) 6 are indeed found to undergo a change in behavior from p- to n-type. We further show that by replacing the PEt 3 ligands by CO ligands, one can control the electronic character of the surface and deposited species.

Research Organization:
Virginia Commonwealth Univ., Richmond, VA (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
SC0006420
OSTI ID:
1459232
Alternate ID(s):
OSTI ID: 1501530
Journal Information:
npj Computational Materials, Journal Name: npj Computational Materials Journal Issue: 1 Vol. 4; ISSN 2057-3960
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United Kingdom
Language:
English

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