Effects of RRAM Electroforming and Switching Methods on Device Performance Elucidated with Ultrafast Current Measurements.

Conference · Thu Jun 01 00:00:00 EDT 2017

OSTI ID:1459111

Jacobs-Gedrim, Robin B; DiGregorio, Steven; Hughart, David Russell; Van Heukelom, Michael; James, Conrad D.; Marinella, Matthew

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1459111
• Report Number(s): SAND2017-6698C; 654785
• Resource Relation: Conference: Proposed for presentation at the 59th Electronic Materials Conference held June 28-30, 2017 in South Bend, Indiana.
• Country of Publication: United States
• Language: English