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Title: Through space and through bridge channels of charge transfer at p-n nano-junctions: A DFT study

Journal Article · · Chemical Physics
 [1]; ORCiD logo [2];  [1];  [1]
  1. North Dakota State Univ., Fargo, ND (United States). Dept. of Chemistry and Biochemistry
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Details of charge density distribution at p-n nano interface are analyzed with density functional theory techniques using model system of dimers of doped silicon quantum dots interacting through bond and through space. Spatial distributions of transition densities between the ground and excited states suggest the character of essential electronic excitations, which have a Fӧrster, bound, unbound, or charge transfer character. A redistribution of electronic density from n-impurities to p-impurities results in a ground state polarization and creates an offset of energies of the bands localized on p-doped quantum dot and the bands localized on n-doped quantum dot. In conclusion, although impurities contribute very few orbitals to the total density, a ground state charge redistribution and polarization are both responsible for the presence of a large number of charge transfer excitations involving solely silicon orbitals.

Research Organization:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC52-06NA25396; CHE-1413614; SC008446
OSTI ID:
1458944
Alternate ID(s):
OSTI ID: 1550698
Report Number(s):
LA-UR-16-22739
Journal Information:
Chemical Physics, Vol. 481, Issue C; ISSN 0301-0104
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

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Cited By (1)