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Gamma radiation effects on siloxane-based additive manufactured structures

Journal Article · · Radiation Physics and Chemistry (1993)
Siloxane-basedadditive manufactured structures prepared by the direct ink write (DIW) technology were exposed to ionizing irradiation in order to gauge radiolysis effects on structure-property relationships. These well-defined 3-D structures were subjected to moderate doses of gamma irradiation in an inert atmosphere and characterized by a suite of experimental methods. Changes in thermal, chemical, microstructure, and mechanical properties were then evaluated by DSC, TGA, FT-IR, mass spectroscopy, EPR, solvent swelling, SEM, and uniaxial compressive load techniques. Our results demonstrated that 3-D structures made from aromatic-free siloxane resins exhibited hardening after being exposed to gamma radiation. This effect was accompanied by gas evolution, decreasing in crystallization levels, decreasing in solvent swelling and damage to the microstructure. Furthermore, long-lived radiation-induced radicals were not detected by EPR methods. Our results are consistent with cross-link formation being the dominant degradation mechanism over chain scission reactions. On the other hand, 3-D structures made from high phenyl content siloxane resins showed little radiation damage as evidenced by low off gassing.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Contributing Organization:
NNSA Kansas City National Security Campus (KCNSC)
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1458926
Alternate ID(s):
OSTI ID: 1400420
Report Number(s):
LA-UR--16-20532
Journal Information:
Radiation Physics and Chemistry (1993), Journal Name: Radiation Physics and Chemistry (1993) Journal Issue: C Vol. 130; ISSN 0969-806X
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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