Anomalous helicity-dependent photocurrent in the topological insulator (Bi0.5Sb0.5)2Te3 on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]

Qu, Dong-Xia; Che, Xiaoyu; Kou, Xufeng; Pan, Lei; Crowhurst, Jonathan; Armstrong, Michael R.; Dubois, Jonathan; Wang, Kang L.; Chapline, George F.

doi:10.1103/PhysRevB.97.045308

Title: Anomalous helicity-dependent photocurrent in the topological insulator ( ${Bi}_{0.5} {Sb}_{0.5}$ ) $_{2} {Te}_{3}$ on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]

Journal Article · Wed Jan 24 00:00:00 EST 2018 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.97.045308· OSTI ID:1458665

Qu, Dong-Xia ^[1]; Che, Xiaoyu ^[2]; Kou, Xufeng ^[2]; Pan, Lei ^[2]; Crowhurst, Jonathan ^[1]; Armstrong, Michael R. ^[1]; Dubois, Jonathan ^[1]; Wang, Kang L. ^[2]; Chapline, George F. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Univ. of California, Los Angeles, CA (United States). Department of Electrical Engineering

We present that the emerging material, topological insulator, has provided new opportunities for spintronic applications, owing to its strong spin-orbit character. Topological insulator based heterostructures that display spin-charge coupling driven by topology at surfaces have great potential for the realization of novel spintronic devices. Here, we report the observation of anomalous photogalvanic effect in (Bi_0.5Sb_0.5)₂Te₃ thin films grown on GaAs substrate. We demonstrate that the magnitude, direction, and temperature dependence of the helicity-dependent photocurrent (HDPC) can be modulated by the gate voltage. From spatially resolved photocurrent measurements, we show that the line profile of HDPC in (Bi_0.5Sb_0.5)₂Te₃/GaAs is unaffected by the variation of beam size, in contrast to the photocurrent response measured in a (Bi_0.5Sb_0.5)₂Te₃/mica structure.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344; 15-LW-018; 16-SI-004

OSTI ID:: 1458665

Alternate ID(s):: OSTI ID: 1417929

Report Number(s):: LLNL-JRNL-697157; PRBMDO; 827767; TRN: US1901495

Journal Information:: Physical Review B, Vol. 97, Issue 4; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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