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Title: Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes

Journal Article · · Advanced Energy Materials
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Division of Chemistry and Chemical Engineering California Institute of Technology 210 Noyes Laboratory, 127–72, Pasadena CA 91125 USA
  2. Molecular Materials Resource Center California Institute of Technology 313 Beckman Institute, 139–74 Pasadena CA 91125 USA

Abstract Photoelectrodes without a p–n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnO x ) layers applied to n‐Si wafers after forming a thin chemically oxidized SiO x layer can passivate the Si surface while producing ≈620 mV photovoltage under 100 mW cm −2 of simulated sunlight. The SnO x layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen‐evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 m H 2 SO 4 (aq). Ideal regenerative solar‐to‐O 2 (g) efficiencies of 4.1% and 3.7%, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H 2 SO 4 (aq) with Pt/IrO x layers as OER catalysts. Stable photocurrents for >100 h are obtained for electrodes with patterned catalyst layers in both 1.0 m KOH(aq) and 1.0 m H 2 SO 4 (aq).

Sponsoring Organization:
USDOE
Grant/Contract Number:
DE‐SC0004993
OSTI ID:
1458579
Journal Information:
Advanced Energy Materials, Journal Name: Advanced Energy Materials Vol. 8 Journal Issue: 24; ISSN 1614-6832
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English
Citation Metrics:
Cited by: 29 works
Citation information provided by
Web of Science

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  • Hall, H. Yvonne; Sherwood, Peter M. A.
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