Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Non-Volatile Redox Transistors for Brain Inspired Computing and Brain Machine Interfaces.

Conference ·
OSTI ID:1458083

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Sandia National Laboratories, Albuquerque, NM
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1458083
Report Number(s):
SAND2017-5664C; 653675
Country of Publication:
United States
Language:
English

Similar Records

Non-volatile redox cells as resistive memory for brain inspired computing.
Conference · Sat Apr 01 00:00:00 EDT 2017 · OSTI ID:1456483

Ion Insertion Electrodes for Brain Inspired Computing and Brain Machine Interfaces.
Conference · Sat Jun 01 00:00:00 EDT 2019 · OSTI ID:1645465

Computing with Defects?: Ion Insertion Electrodes for Brain Inspired Computing and Brain Machine Interfaces.
Conference · Mon Apr 01 00:00:00 EDT 2019 · OSTI ID:1639906

Related Subjects