A split accumulation gate architecture for silicon MOS quantum dots.

Conference · Mon May 01 00:00:00 EDT 2017

OSTI ID:1458019

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1458019
• Report Number(s): SAND2017-5117D; 653301
• Country of Publication: United States
• Language: English