Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films
[2];
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Physics
The separate effects of strain and film thickness on the antiferromagnetic-to-ferromagnetic phase transition temperature of FeRh thin films by both experiment and density functional calculations were determined. Strain was introduced by epitaxial growth onto MgO, SrTiO3, and KTaO3 substrates. Film thicknesses below 15 nm substantially suppress the transition temperature, T, to below room temperature in unstrained films. For strained films, tensile/compressive strain decreases/increases T, respectively. KTaO3(001) substrates produce sufficient compressive strain to increase the transition temperature of 10 nm FeRh films above room temperature, which is useful for many proposed applications previously limited by the stabilization of the ferromagnetic state at small thicknesses. These results demonstrate that a judicious use of film thickness and substrate can be used to manipulate FeRh's transition temperature over a ~200 K range.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1456979
- Alternate ID(s):
- OSTI ID: 1402102
- Journal Information:
- Applied Physics Letters, Vol. 111, Issue 17; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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