Dynamic Impact of Electrode Materials on Interface of Single-Crystalline Methylammonium Lead Bromide Perovskite

Tisdale, Jeremy T.; Muckley, Eric; Ahmadi, Mahshid; Smith, Travis; Seal, Cody; Lukosi, Eric; Ivanov, Ilia N.; Hu, Bin

doi:10.1002/admi.201800476

Title: Dynamic Impact of Electrode Materials on Interface of Single-Crystalline Methylammonium Lead Bromide Perovskite

Journal Article · Tue Jun 19 00:00:00 EDT 2018 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201800476· OSTI ID:1456783

Tisdale, Jeremy T. ^[1]; Muckley, Eric ^[2]; Ahmadi, Mahshid ^[1]; Smith, Travis ^[1]; Seal, Cody ^[1]; Lukosi, Eric ^[1];

^[2];

^[1]

Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

One of the current challenges in methylammonium lead halide (MAPbX₃) perovskite application research is understanding contact formation and interfacial phenomena for highly efficient and stable device performance. For semiconductors, development of contact formation is inseparable from device performance and stability. Single–crystalline MAPbX3 has become of great interest for perovskite devices in photodetectors, light–emitting diodes, and more recently in high–energy radiation detection. Deeper research is required to understand interfacial interactions in single–crystalline MAPbX₃. This article focuses on the dynamic impact of electrode metal (Au and Cr) on methylammonium lead bromide (MAPbBr₃) single crystals. It is studied how charge transport properties of single crystal MAPbBr₃ can be tuned via electrode material selection at the metal/MAPbBr₃ interface to improve device performance with proper contact formation. The ability to create an ohmic–like or nonohmic contact by switching the electrode metal from Cr to Au, respectively, is demonstrated. It is observed that the interfacial charge transfer resistance (recombination resistance) of the Cr/MAPbBr₃ interface is 1.79 × 10⁹ Ω, compared to 1.32 × 10⁷ Ω for the Au/MAPbBr₃. Cr contacts can reduce hysteretic behavior by reducing interfacial recombination and interfacial polarization. Furthermore, these studies provide insight to metal/MAPbX₃ interfacial interactions toward device engineering for hole transport layer–free MAPbX₃ device structures.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1456783

Journal Information:: Advanced Materials Interfaces, Vol. 5, Issue 18; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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