Size Dictated Thermal Conductivity of GaN.

McDonald, Anthony E.; Fuller, Elliot James; Talin, Albert Alec; Rost, C. M.; Maria, J. P.; Gaskins, J. T.; Hopkins, P. E.; Allerman, Andrew A.

doi:10.1063/1.4962010

Size Dictated Thermal Conductivity of GaN.

Conference · Sat Apr 01 00:00:00 EDT 2017

DOI:https://doi.org/10.1063/1.4962010· OSTI ID:1456490

McDonald, Anthony E.; Fuller, Elliot James; Talin, Albert Alec; Rost, C. M.; Maria, J. P.; Gaskins, J. T.; Hopkins, P. E.; Allerman, Andrew A.

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1456490

Report Number(s):: SAND2017-3778C; 652371

Country of Publication:: United States

Language:: English

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Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering Yalamarthy, Ananth Saran; So, Hongyun; Rojo, Miguel Muñoz arXiv https://doi.org/10.48550/arxiv.1710.03279	preprint	January 2017
Phonon confinement and transport in ultrathin films Fu, Bo; Parrish, Kevin D.; Kim, Hyun-Young Physical Review B, Vol. 101, Issue 4 https://doi.org/10.1103/physrevb.101.045417	journal	January 2020
Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Lundh, James Spencer; Chatterjee, Bikramjit; Song, Yiwen Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5115013	journal	October 2019
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Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K Zheng, Qiye; Li, Chunhua; Rai, Akash Physical Review Materials, Vol. 3, Issue 1 https://doi.org/10.1103/physrevmaterials.3.014601	journal	January 2019
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