Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Duan, J.; Huang, H.; Jung, D.; Zhang, Z.; Norman, J.; Bowers, J. E.; Grillot, F.

doi:10.1063/1.5025879

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Journal Article · Thu Jun 21 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5025879· OSTI ID:1456260

; Huang, H.; Jung, D.; ; Norman, J.; Bowers, J. E.; Grillot, F.

This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1456260

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 112; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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