Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Physics
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of of Materials Science and Engineering
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. Here, this study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program; Defense Threat Reduction Agency (DTRA)
- Grant/Contract Number:
- HDTRA 1-11-1-0024; AC05-76RL01830
- OSTI ID:
- 1454741
- Alternate ID(s):
- OSTI ID: 1234173
- Report Number(s):
- PNNL-SA-113796; APPLAB
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 1; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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