skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Synthesis and characterization of Ca-doped LaMnAsO

Abstract

Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La 3+ site by Ca 2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La 1–xCa x)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(x nom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, T N = 355 ± 5 K.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  2. Univ. of Missouri, Columbia, MO (United States)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1441003
Alternate Identifier(s):
OSTI ID: 1437677
Report Number(s):
IS-J-9679
Journal ID: ISSN 2475-9953; PRMHAR
Grant/Contract Number:  
AC02-07CH11358
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 5; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Liu, Yong, Straszheim, Warren E., Das, Pinaki, Islam, Farhan, Heitmann, Thomas W., McQueeney, Robert J., and Vaknin, David. Synthesis and characterization of Ca-doped LaMnAsO. United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.054410.
Liu, Yong, Straszheim, Warren E., Das, Pinaki, Islam, Farhan, Heitmann, Thomas W., McQueeney, Robert J., & Vaknin, David. Synthesis and characterization of Ca-doped LaMnAsO. United States. doi:10.1103/PhysRevMaterials.2.054410.
Liu, Yong, Straszheim, Warren E., Das, Pinaki, Islam, Farhan, Heitmann, Thomas W., McQueeney, Robert J., and Vaknin, David. Fri . "Synthesis and characterization of Ca-doped LaMnAsO". United States. doi:10.1103/PhysRevMaterials.2.054410.
@article{osti_1441003,
title = {Synthesis and characterization of Ca-doped LaMnAsO},
author = {Liu, Yong and Straszheim, Warren E. and Das, Pinaki and Islam, Farhan and Heitmann, Thomas W. and McQueeney, Robert J. and Vaknin, David},
abstractNote = {Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1–xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(xnom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN = 355 ± 5 K.},
doi = {10.1103/PhysRevMaterials.2.054410},
journal = {Physical Review Materials},
number = 5,
volume = 2,
place = {United States},
year = {Fri May 18 00:00:00 EDT 2018},
month = {Fri May 18 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on May 18, 2019
Publisher's Version of Record

Save / Share: