Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Yu, W.; Clericò, V.; Fuentevilla, C. Hernández; Shi, X.; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Diez, E.; Pan, W.; Hawkins, S. D.; Klem, J. F.

doi:10.1088/1367-2630/aac595

Title: Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Journal Article · Tue May 01 00:00:00 EDT 2018 · New Journal of Physics

DOI:https://doi.org/10.1088/1367-2630/aac595· OSTI ID:1439771

Yu, W.; Clericò, V.; Fuentevilla, C. Hernández; Shi, X.; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.;

; Pan, W.; Hawkins, S. D.; Klem, J. F.

We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 K and perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Florida, Gainesville, FL (United States); Georgia Institute of Technology, Atlanta, GA (United States); Univ. of Salamanca (Spain); Univ. of Pavia (Italy)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); Ministry of Economy and Enterprise (MINECO) (Spain); European Regional Development Fund (ERDF); Junta of Castile and León; Ministry of Education, Universities and Research (MIUR) (Italy)

Grant/Contract Number:: FG02-07ER46451; NA0003525; AC04-94AL85000; AC52-06NA25396; MAT2013-46308-C2-1-R; MAT2016-75955-C2-2-R; SA045U16; FFARB 15495-2018

OSTI ID:: 1439771

Alternate ID(s):: OSTI ID: 1474091

Report Number(s):: SAND-2018-10199J

Journal Information:: New Journal of Physics, Journal Name: New Journal of Physics Vol. 20 Journal Issue: 5; ISSN 1367-2630

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 8 works

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References (41)

Excitonic insulator transition in a GaSbAlSbInAs quantum-well structure Zhu, Xiaodong; Quinn, J. J.; Gumbs, Godfrey Solid State Communications, Vol. 75, Issue 7 https://doi.org/10.1016/0038-1098(90)90425-b	journal	August 1990
The transition to the metallic state Mott, N. F. Philosophical Magazine, Vol. 6, Issue 62 https://doi.org/10.1080/14786436108243318	journal	February 1961
Topological charge-density and spin-density waves in InAs/GaSb quantum wells under an in-plane magnetic field Hu, Lun-Hui; Chen, Chih-Chieh; Liu, Chao-Xing Physical Review B, Vol. 96, Issue 7 https://doi.org/10.1103/physrevb.96.075130	journal	August 2017
Macroscopically ordered state in an exciton system Butov, L. V.; Gossard, A. C.; Chemla, D. S. Nature, Vol. 418, Issue 6899 https://doi.org/10.1038/nature00943	journal	August 2002
Evidence for a topological excitonic insulator in InAs/GaSb bilayers Du, Lingjie; Li, Xinwei; Lou, Wenkai Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-01988-1	journal	December 2017
Giant Spin-Orbit Splitting in Inverted $InAs / GaSb$ Double Quantum Wells Nichele, Fabrizio; Kjaergaard, Morten; Suominen, Henri J. Physical Review Letters, Vol. 118, Issue 1 https://doi.org/10.1103/physrevlett.118.016801	journal	January 2017
In _{1− x} Ga _x As‐GaSb _{1− y} As _y heterojunctions by molecular beam epitaxy Sakaki, H.; Chang, L. L.; Ludeke, R. Applied Physics Letters, Vol. 31, Issue 3 https://doi.org/10.1063/1.89609	journal	August 1977
Resistance resonance induced by electron-hole hybridization in a strongly coupled InAs/GaSb/AlSb heterostructure Cooper, L. J.; Patel, N. K.; Drouot, V. Physical Review B, Vol. 57, Issue 19 https://doi.org/10.1103/physrevb.57.11915	journal	May 1998
Experimental signatures of the inverted phase in InAs/GaSb coupled quantum wells Karalic, Matija; Mueller, Susanne; Mittag, Christopher Physical Review B, Vol. 94, Issue 24 https://doi.org/10.1103/physrevb.94.241402	journal	December 2016
Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors Pan, W.; Klem, J. F.; Kim, J. K. Applied Physics Letters, Vol. 102, Issue 3 https://doi.org/10.1063/1.4789555	journal	January 2013
Single valley Dirac fermions in zero-gap HgTe quantum wells Büttner, B.; Liu, C. X.; Tkachov, G. Nature Physics, Vol. 7, Issue 5 https://doi.org/10.1038/nphys1914	journal	February 2011
Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5 Lu, Y. F.; Kono, H.; Larkin, T. I. Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms14408	journal	February 2017
Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb Lyo, S. K.; Pan, W. Journal of Applied Physics, Vol. 118, Issue 19 https://doi.org/10.1063/1.4935546	journal	November 2015
Spontaneous Bose Coherence of Excitons and Polaritons Snoke, D. Science, Vol. 298, Issue 5597 https://doi.org/10.1126/science.1078082	journal	November 2002
Bose–Einstein condensation of excitons in bilayer electron systems Eisenstein, J. P.; MacDonald, A. H. Nature, Vol. 432, Issue 7018 https://doi.org/10.1038/nature03081	journal	December 2004
Edge transport in the trivial phase of InAs/GaSb Nichele, Fabrizio; Suominen, Henri J.; Kjaergaard, Morten New Journal of Physics, Vol. 18, Issue 8 https://doi.org/10.1088/1367-2630/18/8/083005	journal	July 2016
Metal-insulator transition in a HgTe quantum well under hydrostatic pressure Olshanetsky, E. B.; Kvon, Z. D.; Gerasimenko, Ya. A. JETP Letters, Vol. 98, Issue 12 https://doi.org/10.1134/s0021364013250176	journal	February 2014
Excitonic Insulator Jérome, D.; Rice, T. M.; Kohn, W. Physical Review, Vol. 158, Issue 2 https://doi.org/10.1103/PhysRev.158.462	journal	June 1967
Anisotropy Effects in the Excitonic Insulator Zittartz, Johannes Physical Review, Vol. 162, Issue 3 https://doi.org/10.1103/PhysRev.162.752	journal	October 1967
Excitonic Phases Kohn, W. Physical Review Letters, Vol. 19, Issue 8 https://doi.org/10.1103/PhysRevLett.19.439	journal	August 1967
Excitonic insulator phase in ${TmSe}_{0.45}$ ${Te}_{0.55}$ Bucher, B.; Steiner, P.; Wachter, P. Physical Review Letters, Vol. 67, Issue 19 https://doi.org/10.1103/PhysRevLett.67.2717	journal	November 1991
Exciton Condensate in Semiconductor Quantum Well Structures Zhu, Xuejun; Littlewood, P. B.; Hybertsen, Mark S. Physical Review Letters, Vol. 74, Issue 9 https://doi.org/10.1103/PhysRevLett.74.1633	journal	February 1995
Coherent Transport in a Homojunction between an Excitonic Insulator and Semimetal Rontani, Massimo; Sham, L. J. Physical Review Letters, Vol. 94, Issue 18 https://doi.org/10.1103/PhysRevLett.94.186404	journal	May 2005
Evidence for an Excitonic Insulator Phase in $1 T − {TiSe}_{2}$ Cercellier, H.; Monney, C.; Clerc, F. Physical Review Letters, Vol. 99, Issue 14 https://doi.org/10.1103/PhysRevLett.99.146403	journal	October 2007
Excitonic Instability and Electric-Field-Induced Phase Transition Towards a Two-Dimensional Exciton Condensate Naveh, Y.; Laikhtman, B. Physical Review Letters, Vol. 77, Issue 5 https://doi.org/10.1103/PhysRevLett.77.900	journal	July 1996
Cyclotron-resonance oscillations in a two-dimensional electron-hole system Kono, J.; McCombe, B. D.; Cheng, J. -P. Physical Review B, Vol. 50, Issue 16 https://doi.org/10.1103/PhysRevB.50.12242	journal	October 1994
Ground State of a Two-Dimensional Coupled Electron-Hole Gas in $InAs / GaSb$ Narrow Gap Heterostructures Marlow, T. P.; Cooper, L. J.; Arnone, D. D. Physical Review Letters, Vol. 82, Issue 11 https://doi.org/10.1103/PhysRevLett.82.2362	journal	March 1999
Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers Seamons, J. A.; Morath, C. P.; Reno, J. L. Physical Review Letters, Vol. 102, Issue 2 https://doi.org/10.1103/PhysRevLett.102.026804	journal	January 2009
Magneto-infrared modes in InAs-AlSb-GaSb coupled quantum wells Tung, L. -C.; Folkes, P. A.; Gumbs, Godfrey Physical Review B, Vol. 82, Issue 11 https://doi.org/10.1103/PhysRevB.82.115305	journal	September 2010
Interplay of Exciton Condensation and the Quantum Spin Hall Effect in $InAs / GaSb$ Bilayers Pikulin, D. I.; Hyart, T. Physical Review Letters, Vol. 112, Issue 17 https://doi.org/10.1103/PhysRevLett.112.176403	journal	April 2014
Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
Edge channel transport in the InAs/GaSb topological insulating phase Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji Physical Review B, Vol. 87, Issue 23 https://doi.org/10.1103/PhysRevB.87.235311	journal	June 2013
Quantum Spin Hall Effect in Inverted Type-II Semiconductors Liu, Chaoxing; Hughes, Taylor L.; Qi, Xiao-Liang Physical Review Letters, Vol. 100, Issue 23 https://doi.org/10.1103/PhysRevLett.100.236601	journal	June 2008
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy Jiang, Y.; Thapa, S.; Sanders, G. D. Physical Review B, Vol. 95, Issue 4 https://doi.org/10.1103/PhysRevB.95.045116	journal	January 2017
Insulating Behavior at the Neutrality Point in Single-Layer Graphene Amet, F.; Williams, J. R.; Watanabe, K. Physical Review Letters, Vol. 110, Issue 21 https://doi.org/10.1103/PhysRevLett.110.216601	journal	May 2013
Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells Knez, Ivan; Du, R. R.; Sullivan, Gerard Physical Review B, Vol. 81, Issue 20 https://doi.org/10.1103/PhysRevB.81.201301	journal	May 2010
Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji Physical Review B, Vol. 91, Issue 24 https://doi.org/10.1103/PhysRevB.91.245309	journal	June 2015
Insulating State and Giant Nonlocal Response in an $In As / Ga Sb$ Quantum Well in the Quantum Hall Regime Nichele, Fabrizio; Pal, Atindra Nath; Pietsch, Patrick Physical Review Letters, Vol. 112, Issue 3 https://doi.org/10.1103/PhysRevLett.112.036802	journal	January 2014
Transport in Two-Dimensional Disordered Semimetals Knap, Michael; Sau, Jay D.; Halperin, Bertrand I. Physical Review Letters, Vol. 113, Issue 18 https://doi.org/10.1103/PhysRevLett.113.186801	journal	October 2014
Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells Qu, Fanming; Beukman, Arjan J. A.; Nadj-Perge, Stevan Physical Review Letters, Vol. 115, Issue 3 https://doi.org/10.1103/PhysRevLett.115.036803	journal	July 2015

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Title: Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

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