Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Journal Article · Tue May 01 00:00:00 EDT 2018 · New Journal of Physics

DOI:https://doi.org/10.1088/1367-2630/aac595· OSTI ID:1439771

Yu, W.; Clericò, V.; Fuentevilla, C. Hernández; Shi, X.; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Diez, E.; Pan, W.; Hawkins, S. D.; Klem, J. F.

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• Research Organization: Georgia Inst. of Technology, Atlanta, GA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Florida, Gainesville, FL (United States); Univ. of Pavia (Italy); Univ. of Salamanca (Spain)
• Sponsoring Organization: European Regional Development Fund (ERDF); Junta of Castile and León; Ministry of Economy and Enterprise (MINECO) (Spain); Ministry of Education, Universities and Research (MIUR) (Italy); USDOE; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC04-94AL85000; AC52-06NA25396; FG02-07ER46451; NA0003525
• OSTI ID: 1439771
• Alternate ID(s): OSTI ID: 1474091; OSTI ID: 22994561
• Report Number(s): SAND--2018-10199J
• Journal Information: New Journal of Physics, Journal Name: New Journal of Physics Journal Issue: 5 Vol. 20; ISSN 1367-2630
• Publisher: IOP Publishing
• Country of Publication: United Kingdom
• Language: English

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