Distinct Optoelectronic Signatures for Charge Transfer and Energy Transfer in Quantum Dot-MoS2 Hybrid Photodetectors Revealed by Photocurrent Imaging Microscopy

Li, Mingxing; Chen, Jia-Shiang; Routh, Prahlad K.; Zahl, Percy; Nam, Chang-Yong; Cotlet, Mircea

doi:10.1002/adfm.201707558

Title: Distinct Optoelectronic Signatures for Charge Transfer and Energy Transfer in Quantum Dot-MoS₂ Hybrid Photodetectors Revealed by Photocurrent Imaging Microscopy

Journal Article · Thu May 17 00:00:00 EDT 2018 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201707558· OSTI ID:1440894

Li, Mingxing ^[1]; Chen, Jia-Shiang ^[2]; Routh, Prahlad K. ^[3]; Zahl, Percy ^[1]; Nam, Chang-Yong ^[1];

^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN); Stony Brook Univ., NY (United States). Dept. of Materials Science and Chemical Engineering
Stony Brook Univ., NY (United States). Dept. of Materials Science and Chemical Engineering; Columbia Univ., New York, NY (United States). Dept. of Physics

Atomically thin transition metal dichalcogenides (TMDCs) have intriguing nanoscale properties like high charge mobility, photosensitivity, layer-thickness-dependent bandgap, and mechanical flexibility, which are all appealing for the development of next generation optoelectronic, catalytic, and sensory devices. Their atomically thin thickness, however, renders TMDCs poor absorptivity. For this study, bilayer MoS₂ is combined with core-only CdSe QDs and core/shell CdSe/ZnS QDs to obtain hybrids with increased light harvesting and exhibiting interfacial charge transfer (CT) and nonradiative energy transfer (NET), respectively. Field-effect transistors based on these hybrids and their responses to varying laser power and applied gate voltage are investigated with scanning photocurrent microscopy (SPCM) in view of their potential utilization in light harvesting and photodetector applications. CdSe–MoS₂ hybrids are found to exhibit encouraging properties for photodetectors, like high responsivity and fast on/off response under low light exposure while CdSe/ZnS–MoS₂ hybrids show enhanced charge carrier generation with increased light exposure, thus suitable for photovoltaics. While distinguishing optically between CT and NET in QD–TMDCs is nontrivial, it is found that they can be differentiated by SPCM as these two processes exhibit distinctive light-intensity dependencies: CT causes a photogating effect, decreasing the photocurrent response with increasing light power while NET increases the photocurrent response with increasing light power, opposite to CT case.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1440894

Alternate ID(s):: OSTI ID: 1437667

Report Number(s):: BNL-205746-2018-JAAM

Journal Information:: Advanced Functional Materials, Vol. 28, Issue 29; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 61 works

Citation information provided by
Web of Science

References (64)

Elucidating the Photoresponse of Ultrathin MoS ₂ Field-Effect Transistors by Scanning Photocurrent Microscopy Wu, Chung-Chiang; Jariwala, Deep; Sangwan, Vinod K. The Journal of Physical Chemistry Letters, Vol. 4, Issue 15 https://doi.org/10.1021/jz401199x	journal	July 2013
High-Gain Phototransistors Based on a CVD MoS ₂ Monolayer Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao Advanced Materials, Vol. 25, Issue 25 https://doi.org/10.1002/adma.201301244	journal	May 2013
Reduced Dielectric Screening and Enhanced Energy Transfer in Single- and Few-Layer MoS ₂ Prins, Ferry; Goodman, Aaron J.; Tisdale, William A. Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl5019386	journal	October 2014
Experimental Determination of the Extinction Coefficient of CdTe, CdSe, and CdS Nanocrystals Yu, W. William; Qu, Lianhua; Guo, Wenzhuo Chemistry of Materials, Vol. 15, Issue 14, p. 2854-2860 https://doi.org/10.1021/cm034081k	journal	July 2003
Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors Robin, A.; Lhuillier, E.; Xu, X. Z. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep24909	journal	May 2016
Large and Tunable Photothermoelectric Effect in Single-Layer MoS ₂ Buscema, Michele; Barkelid, Maria; Zwiller, Val Nano Letters, Vol. 13, Issue 2 https://doi.org/10.1021/nl303321g	journal	January 2013
Scalable Growth of High-Quality Polycrystalline MoS ₂ Monolayers on SiO ₂ with Tunable Grain Sizes Zhang, Jing; Yu, Hua; Chen, Wei ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn5020819	journal	May 2014
High mobility ambipolar MoS ₂ field-effect transistors: Substrate and dielectric effects Bao, Wenzhong; Cai, Xinghan; Kim, Dohun Applied Physics Letters, Vol. 102, Issue 4 https://doi.org/10.1063/1.4789365	journal	January 2013
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces Lee, Yi-Hsien; Yu, Lili; Wang, Han Nano Letters, Vol. 13, Issue 4 https://doi.org/10.1021/nl400687n	journal	March 2013
Energy Transfer from Quantum Dots to Graphene and MoS ₂ : The Role of Absorption and Screening in Two-Dimensional Materials Raja, Archana; Montoya−Castillo, Andrés; Zultak, Johanna Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.5b05012	journal	March 2016
Hybrid graphene–quantum dot phototransistors with ultrahigh gain Konstantatos, Gerasimos; Badioli, Michela; Gaudreau, Louis Nature Nanotechnology, Vol. 7, Issue 6 https://doi.org/10.1038/nnano.2012.60	journal	May 2012
Ultra-broadband and high response of the Bi ₂ Te ₃ –Si heterojunction and its application as a photodetector at room temperature in harsh working environments Yao, Jiandong; Shao, Jianmei; Wang, Yingxin Nanoscale, Vol. 7, Issue 29 https://doi.org/10.1039/C5NR02953H	journal	January 2015
Mobility engineering and a metal–insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3687	journal	June 2013
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Mapping Spatial Heterogeneity in Cu(In1−xGax)Se2 Nanocrystal-Based Photovoltaics with Scanning Photocurrent and Fluorescence Microscopy Ostrowski, David P.; Glaz, Micah S.; Goodfellow, Brian W. Small, Vol. 6, Issue 24 https://doi.org/10.1002/smll.201001274	journal	October 2010
Single-Layer MoS₂ Phototransistors Yin, Zongyou; Li, Hai; Li, Hong ACS Nano, Vol. 6, Issue 1, p. 74-80 https://doi.org/10.1021/nn2024557	journal	December 2011
Breakdown of High-Performance Monolayer MoS ₂ Transistors Lembke, Dominik; Kis, Andras ACS Nano, Vol. 6, Issue 11 https://doi.org/10.1021/nn303772b	journal	October 2012
The valley Hall effect in MoS2 transistors Mak, K. F.; McGill, K. L.; Park, J. Science, Vol. 344, Issue 6191 https://doi.org/10.1126/science.1250140	journal	June 2014
Ambipolar MoS ₂ Thin Flake Transistors Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl2021575	journal	February 2012
All-Layered 2D Optoelectronics: A High-Performance UV-vis-NIR Broadband SnSe Photodetector with Bi ₂ Te ₃ Topological Insulator Electrodes Yao, Jiandong; Zheng, Zhaoqiang; Yang, Guowei Advanced Functional Materials, Vol. 27, Issue 33 https://doi.org/10.1002/adfm.201701823	journal	July 2017
Electrical behavior of the Au/MoS2 interface studied by light emission induced by scanning tunneling microscopy Maurel, C.; Ajustron, F.; Péchou, R. Surface Science, Vol. 600, Issue 2 https://doi.org/10.1016/j.susc.2005.10.042	journal	January 2006
Extraordinary Room-Temperature Photoluminescence in Triangular WS ₂ Monolayers Gutiérrez, Humberto R.; Perea-López, Nestor; Elías, Ana Laura Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl3026357	journal	December 2012
Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures Zhang, Wenjing; Chuu, Chih-Piao; Huang, Jing-Kai Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep03826	journal	January 2014
Piezophototronic Effect in Single-Atomic-Layer MoS ₂ for Strain-Gated Flexible Optoelectronics Wu, Wenzhuo; Wang, Lei; Yu, Ruomeng Advanced Materials, Vol. 28, Issue 38 https://doi.org/10.1002/adma.201602854	journal	August 2016
Flexible and Transparent MoS ₂ Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures Lee, Gwan-Hyoung; Yu, Young-Jun; Cui, Xu ACS Nano, Vol. 7, Issue 9 https://doi.org/10.1021/nn402954e	journal	August 2013
Organic–Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light Shao, Dali; Gao, Jian; Chow, Philippe Nano Letters, Vol. 15, Issue 6 https://doi.org/10.1021/acs.nanolett.5b00380	journal	May 2015
Integrated Circuits Based on Bilayer MoS₂ Transistors Wang, Han; Yu, Lili; Lee, Yi-Hsien Nano Letters, Vol. 12, Issue 9, p. 4674-4680 https://doi.org/10.1021/nl302015v	journal	January 2012
Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity Sun, Zhenhua; Liu, Zhike; Li, Jinhua Advanced Materials, Vol. 24, Issue 43 https://doi.org/10.1002/adma.201202220	journal	August 2012
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors Ryou, Junga; Kim, Yong-Sung; Kc, Santosh Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep29184	journal	July 2016
Few-Layer MoS ₂ : A Promising Layered Semiconductor Ganatra, Rudren; Zhang, Qing ACS Nano, Vol. 8, Issue 5 https://doi.org/10.1021/nn405938z	journal	April 2014
Two-dimensional atomic crystals Novoselov, K. S.; Jiang, D.; Schedin, F. Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453 https://doi.org/10.1073/pnas.0502848102	journal	July 2005
Two-dimensional transition metal dichalcogenide nanosheet-based composites Tan, Chaoliang; Zhang, Hua Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C4CS00182F	journal	January 2015
Hybrid 2D-0D MoS ₂ -PbS Quantum Dot Photodetectors Kufer, Dominik; Nikitskiy, Ivan; Lasanta, Tania Advanced Materials, Vol. 27, Issue 1 https://doi.org/10.1002/adma.201402471	journal	November 2014
Oxygen-Assisted Charge Transfer Between ZnO Quantum Dots and Graphene Guo, Wenhao; Xu, Shuigang; Wu, Zefei Small, Vol. 9, Issue 18 https://doi.org/10.1002/smll.201202855	journal	March 2013
Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles Yan, Feng; Li, Jinhua; Mok, Sheung Man Journal of Applied Physics, Vol. 106, Issue 7 https://doi.org/10.1063/1.3225760	journal	October 2009
Nonradiative Energy Transfer from Individual CdSe/ZnS Quantum Dots to Single-Layer and Few-Layer Tin Disulfide Zang, Huidong; Routh, Prahlad K.; Huang, Yuan ACS Nano, Vol. 10, Issue 4 https://doi.org/10.1021/acsnano.6b01538	journal	April 2016
Core size dependent hole transfer from a photoexcited CdSe/ZnS quantum dot to a conductive polymer Zang, Huidong; Routh, Prahlad K.; Alam, Rabeka Chem. Commun., Vol. 50, Issue 45 https://doi.org/10.1039/C3CC47975G	journal	January 2014
Direct Photocurrent Mapping of Organic Solar Cells Using a Near-Field Scanning Optical Microscope McNeill, Christopher R.; Frohne, Holger; Holdsworth, John L. Nano Letters, Vol. 4, Issue 2 https://doi.org/10.1021/nl0349496	journal	February 2004
Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors Kim, Cheol-Joo; Lee, Hyun-Seung; Cho, Yong-Jun Nano Letters, Vol. 10, Issue 6 https://doi.org/10.1021/nl100136b	journal	June 2010
Ultrasensitive photodetectors based on monolayer MoS2 Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin Nature Nanotechnology, Vol. 8, Issue 7 https://doi.org/10.1038/nnano.2013.100	journal	June 2013
High Responsivity and Gate Tunable Graphene-MoS ₂ Hybrid Phototransistor Xu, Hua; Wu, Juanxia; Feng, Qingliang Small, Vol. 10, Issue 11 https://doi.org/10.1002/smll.201303670	journal	March 2014
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Photoresponse of atomically thin MoS ₂ layers and their planar heterojunctions Kallatt, Sangeeth; Umesh, Govindarao; Bhat, Navakanta Nanoscale, Vol. 8, Issue 33 https://doi.org/10.1039/C6NR02828D	journal	January 2016
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS ₂ Interfaces Gong, Cheng; Colombo, Luigi; Wallace, Robert M. Nano Letters, Vol. 14, Issue 4 https://doi.org/10.1021/nl403465v	journal	March 2014
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors Prasai, Dhiraj; Klots, Andrey R.; Newaz, Akm Nano Letters, Vol. 15, Issue 7 https://doi.org/10.1021/acs.nanolett.5b00514	journal	June 2015
Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS ₂ field-effect transistors Cho, Kyungjune; Kim, Tae-Young; Park, Woanseo Nanotechnology, Vol. 25, Issue 15 https://doi.org/10.1088/0957-4484/25/15/155201	journal	March 2014
High Performance Multilayer MoS₂Transistors with Scandium Contacts Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma Nano Letters, Vol. 13, Issue 1, p. 100-105 https://doi.org/10.1021/nl303583v	journal	December 2012
High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts Fang, Hui; Chuang, Steven; Chang, Ting Chia Nano Letters, Vol. 12, Issue 7, p. 3788-3792 https://doi.org/10.1021/nl301702r	journal	June 2012
Integrated Circuits and Logic Operations Based on Single-Layer MoS ₂ Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203715c	journal	November 2011
Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS $_{2}$ Cheiwchanchamnangij, Tawinan; Lambrecht, Walter R. L. Physical Review B, Vol. 85, Issue 20 https://doi.org/10.1103/PhysRevB.85.205302	journal	May 2012
Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep29016	journal	June 2016
Electroluminescence in Single Layer MoS₂ Sundaram, R. S.; Engel, M.; Lombardo, A. Nano Letters, Vol. 13, Issue 4, p. 1416-1421 https://doi.org/10.1021/nl400516a	journal	March 2013
Experimental Determination of the Extinction Coefficient of CdTe, CdSe and CdS Nanocrystals. Yu, W. William; Qu, Lianhua; Guo, Wenzhuo Chemistry of Materials, Vol. 16, Issue 3 https://doi.org/10.1021/cm033007z	journal	February 2004
Electroluminescence in Single Layer MoS2 Sundaram, R. S.; Engel, M.; Lombardo, A. arXiv https://doi.org/10.48550/arxiv.1211.4311	text	January 2012
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2 Zhao, Weijie; Ghorannevis, Zohreh; Chua, Leiqiang arXiv https://doi.org/10.48550/arxiv.1212.5415	text	January 2012
High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects Bao, Wenzhong; Cai, Xinghan; Kim, Dohun arXiv https://doi.org/10.48550/arxiv.1212.6292	text	January 2012
Mobility engineering and metal-insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras arXiv https://doi.org/10.48550/arxiv.1301.4947	text	January 2013
Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy Wu, Chung-Chiang; Jariwala, Deep; Sangwan, Vinod K. arXiv https://doi.org/10.48550/arxiv.1307.5032	text	January 2013
Reduced dielectric screening and enhanced energy transfer in single and few-layer MoS2 Prins, Ferry; Goodman, Aaron J.; Tisdale, William A. arXiv https://doi.org/10.48550/arxiv.1408.1501	text	January 2014
Two Dimensional Atomic Crystals Novoselov, K. S.; Jiang, D.; Booth, T. arXiv https://doi.org/10.48550/arxiv.cond-mat/0503533	text	January 2005

Cited By (4)

Recent Advances in the Functional 2D Photonic and Optoelectronic Devices Wang, Xiaoting; Cui, Yu; Li, Tao Advanced Optical Materials, Vol. 7, Issue 3 https://doi.org/10.1002/adom.201801274	journal	December 2018
Strategies for Air‐Stable and Tunable Monolayer MoS ₂ ‐Based Hybrid Photodetectors with High Performance by Regulating the Fully Inorganic Trihalide Perovskite Nanocrystals Zhang, Louwen; Shen, Shaoli; Li, Man Advanced Optical Materials, Vol. 7, Issue 11 https://doi.org/10.1002/adom.201801744	journal	March 2019
Dip-coated colloidal quantum-dot films for high-performance broadband photodetectors Shen, Ting; Yuan, Jifeng; Zhong, Xinhua Journal of Materials Chemistry C, Vol. 7, Issue 21 https://doi.org/10.1039/c9tc00079h	journal	January 2019
Observation of charge transfer in mixed-dimensional heterostructures formed by transition metal dichalcogenide monolayers and PbS quantum dots Zereshki, Peymon; Tavakoli, Mohammad Mahdi; Valencia-Acuna, Pavel Physical Review B, Vol. 100, Issue 23 https://doi.org/10.1103/physrevb.100.235411	journal	December 2019

Figures / Tables (6)

Similar Records

Investigation on the AgPt and AgPd hybrid alloy nanoparticles (HANPs) for the hybrid MoS₂/ZnO/HANP UV photodetector application

Journal Article · Fri Nov 04 00:00:00 EDT 2022 · Applied Surface Science · OSTI ID:1440894

Lin, Shusen; Mandavkar, Rutuja; Habib, Md. Ahasan; +6 more

Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

Journal Article · Mon Mar 21 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:1440894

Huang, Yuan; Zang, Huidong; Nam, Chang-Yong; +3 more

Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

Journal Article · Thu Mar 24 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:1440894

Cotlet, Mircea; Huang, Yuan Zang; Chen, Jia -Shiang; +3 more

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
transition metal dichalcogenides
TMDCs
colloidal quantum dots
light harvesting
excitonic nanomaterials
photocurrent imaging
charge transfer
energy transfer

Title: Distinct Optoelectronic Signatures for Charge Transfer and Energy Transfer in Quantum Dot-MoS2 Hybrid Photodetectors Revealed by Photocurrent Imaging Microscopy

Citation Formats