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Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/1.5004700· OSTI ID:1435115
 [1];  [2];  [3];  [4];  [5];  [6];  [6];  [7];  [3];  [3];  [8]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Chinese Academy of Sciences, Shanghai (China); Shanghai Tech Univ., Shanghai (China)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); National Univ. of Defense Technology, Changsha (China)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Max Planck-POSTECH/Hsinch Center for Complex Phase Materials, Gyeongbuk (South Korea)
  5. Pusan National Univ., Busan (South Korea)
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  7. Chinese Academy of Sciences, Shanghai (China); Shanghai Tech Univ., Shanghai (China)
  8. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOC is found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe2 on bilayer graphene a semimetal.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1435115
Alternate ID(s):
OSTI ID: 1421017
OSTI ID: 1437578
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 2 Vol. 6; ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (5)

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe 2 on graphene/6 H -SiC(0001) by molecular beam epitaxy journal December 2019
Mechanical characterization of phase-changed single-layer MoS 2 sheets journal February 2019
Experimental progress on layered topological semimetals journal April 2019
Thickness dependent electronic structure of exfoliated mono- and few-layer 1 T ′ − MoTe 2 journal October 2018
Experimental Progress on Layered Topological Semimetals text January 2019

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