Pseudospin Electronics in Phosphorene Nanoribbons

Soleimanikahnoj, S.; Knezevic, I.

doi:10.1103/PhysRevApplied.8.064021

Title: Pseudospin Electronics in Phosphorene Nanoribbons

Journal Article · Tue Dec 19 00:00:00 EST 2017 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.8.064021· OSTI ID:1434273

Soleimanikahnoj, S. ^[1]; Knezevic, I. ^[1]

Univ. of Wisconsin-Madison, Madison, WI (United States)

Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we propose edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: SC0008712

OSTI ID:: 1434273

Alternate ID(s):: OSTI ID: 1414046

Journal Information:: Physical Review Applied, Vol. 8, Issue 6; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 17 works

Citation information provided by
Web of Science

References (72)

A silicon-based nuclear spin quantum computer Kane, B. E. Nature, Vol. 393, Issue 6681 https://doi.org/10.1038/30156	journal	May 1998
Scattering from spin-polarized charged impurities in graphene Vierimaa, Ville; Fan, Zheyong; Harju, Ari Physical Review B, Vol. 95, Issue 4 https://doi.org/10.1103/PhysRevB.95.041401	journal	January 2017
Metallic and ferromagnetic edges in molybdenum disulfide nanoribbons Botello-Méndez, A. R.; López-Urías, F.; Terrones, M. Nanotechnology, Vol. 20, Issue 32 https://doi.org/10.1088/0957-4484/20/32/325703	journal	July 2009
Pseudospin magnetism in graphene Min, Hongki; Borghi, Giovanni; Polini, Marco Physical Review B, Vol. 77, Issue 4 https://doi.org/10.1103/PhysRevB.77.041407	journal	January 2008
Valley filter and valley valve in graphene Rycerz, A.; Tworzydło, J.; Beenakker, C. W. J. Nature Physics, Vol. 3, Issue 3, p. 172-175 https://doi.org/10.1038/nphys547	journal	February 2007
Spin and pseudospins in layered transition metal dichalcogenides Xu, Xiaodong; Yao, Wang; Xiao, Di Nature Physics, Vol. 10, Issue 5 https://doi.org/10.1038/nphys2942	journal	April 2014
Bulk Spin-Resonance Quantum Computation Gershenfeld, N. A.; Chuang, I. L. Science, Vol. 275, Issue 5298 https://doi.org/10.1126/science.275.5298.350	journal	January 1997
Valley Susceptibility of an Interacting Two-Dimensional Electron System Gunawan, O.; Shkolnikov, Y. P.; Vakili, K. Physical Review Letters, Vol. 97, Issue 18 https://doi.org/10.1103/PhysRevLett.97.186404	journal	November 2006
Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices Baibich, M. N.; Broto, J. M.; Fert, A. Physical Review Letters, Vol. 61, Issue 21 https://doi.org/10.1103/PhysRevLett.61.2472	journal	November 1988
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation Wood, Joshua D.; Wells, Spencer A.; Jariwala, Deep Nano Letters, Vol. 14, Issue 12 https://doi.org/10.1021/nl5032293	journal	November 2014
Side-gate graphene field-effect transistors with high transconductance Hähnlein, B.; Händel, B.; Pezoldt, J. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4748112	journal	August 2012
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport Xiao, Di; Yao, Wang; Niu, Qian Physical Review Letters, Vol. 99, Issue 23 https://doi.org/10.1103/PhysRevLett.99.236809	journal	December 2007
Large Spin Diffusion Length in an Amorphous Organic Semiconductor Shim, J. H.; Raman, K. V.; Park, Y. J. Physical Review Letters, Vol. 100, Issue 22 https://doi.org/10.1103/PhysRevLett.100.226603	journal	June 2008
Pseudospin Valve in Bilayer Graphene: Towards Graphene-Based Pseudospintronics San-Jose, P.; Prada, E.; McCann, E. Physical Review Letters, Vol. 102, Issue 24 https://doi.org/10.1103/PhysRevLett.102.247204	journal	June 2009
Pseudospin polarized quantum transport in monolayer graphene Majidi, Leyla; Zareyan, Malek Physical Review B, Vol. 83, Issue 11 https://doi.org/10.1103/PhysRevB.83.115422	journal	March 2011
Unravelling the role of the interface for spin injection into organic semiconductors Barraud, Clément; Seneor, Pierre; Mattana, Richard Nature Physics, Vol. 6, Issue 8 https://doi.org/10.1038/nphys1688	journal	June 2010
Toward a realistic description of multilayer black phosphorus: From $G W$ approximation to large-scale tight-binding simulations Rudenko, A. N.; Yuan, Shengjun; Katsnelson, M. I. Physical Review B, Vol. 92, Issue 8 https://doi.org/10.1103/PhysRevB.92.085419	journal	August 2015
Boron nitride substrates for high-quality graphene electronics Dean, C. R.; Young, A. F.; Meric, I. Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726 https://doi.org/10.1038/nnano.2010.172	journal	August 2010
Environmental instability of few-layer black phosphorus Island, Joshua O.; Steele, Gary A.; Zant, Herre S. J. van der 2D Materials, Vol. 2, Issue 1 https://doi.org/10.1088/2053-1583/2/1/011002	journal	January 2015
Local gating of a graphene Hall bar by graphene side gates Molitor, F.; Güttinger, J.; Stampfer, C. Physical Review B, Vol. 76, Issue 24 https://doi.org/10.1103/PhysRevB.76.245426	journal	December 2007
Measurement of Scattering Rate and Minimum Conductivity in Graphene Tan, Y. -W.; Zhang, Y.; Bolotin, K. Physical Review Letters, Vol. 99, Issue 24 https://doi.org/10.1103/PhysRevLett.99.246803	journal	December 2007
Room-temperature magnetism on the zigzag edges of phosphorene nanoribbons Yang, Guang; Xu, Shenglong; Zhang, Wei Physical Review B, Vol. 94, Issue 7 https://doi.org/10.1103/PhysRevB.94.075106	journal	August 2016
Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching Kim, Jin Sung; Jeon, Pyo Jin; Lee, Junyeong Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b01746	journal	August 2015
Disorder and electronic transport in graphene Mucciolo, E. R.; Lewenkopf, C. H. Journal of Physics: Condensed Matter, Vol. 22, Issue 27 https://doi.org/10.1088/0953-8984/22/27/273201	journal	June 2010
Programmable computing with a single magnetoresistive element Ney, A.; Pampuch, C.; Koch, R. Nature, Vol. 425, Issue 6957 https://doi.org/10.1038/nature02014	journal	October 2003
Spintronics: Fundamentals and applications Žutić, Igor; Fabian, Jaroslav; Das Sarma, S. Reviews of Modern Physics, Vol. 76, Issue 2 https://doi.org/10.1103/RevModPhys.76.323	journal	April 2004
Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device Banerjee, S. K.; Register, L. F.; Tutuc, E. IEEE Electron Device Letters, Vol. 30, Issue 2 https://doi.org/10.1109/LED.2008.2009362	journal	February 2009
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions Yuasa, Shinji; Nagahama, Taro; Fukushima, Akio Nature Materials, Vol. 3, Issue 12 https://doi.org/10.1038/nmat1257	journal	October 2004
Topological origin of quasi-flat edge band in phosphorene Ezawa, Motohiko New Journal of Physics, Vol. 16, Issue 11 https://doi.org/10.1088/1367-2630/16/11/115004	journal	October 2014
Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization Lu, Wanglin; Nan, Haiyan; Hong, Jinhua Nano Research, Vol. 7, Issue 6 https://doi.org/10.1007/s12274-014-0446-7	journal	May 2014
Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus Tayari, V.; Hemsworth, N.; Cyr-Choinière, O. Physical Review Applied, Vol. 5, Issue 6 https://doi.org/10.1103/PhysRevApplied.5.064004	journal	June 2016
Spintronics: A Spin-Based Electronics Vision for the Future Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A. Science, Vol. 294, Issue 5546, p. 1488-1495 https://doi.org/10.1126/science.1065389	journal	November 2001
Quantum Hall effect and semiconductor-to-semimetal transition in biased black phosphorus Yuan, Shengjun; van Veen, Edo; Katsnelson, Mikhail I. Physical Review B, Vol. 93, Issue 24 https://doi.org/10.1103/PhysRevB.93.245433	journal	June 2016
Topological Origin of Zero-Energy Edge States in Particle-Hole Symmetric Systems Ryu, Shinsei; Hatsugai, Yasuhiro Physical Review Letters, Vol. 89, Issue 7 https://doi.org/10.1103/PhysRevLett.89.077002	journal	July 2002
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Probing Charged Impurities in Suspended Graphene Using Raman Spectroscopy Ni, Zhen Hua; Yu, Ting; Luo, Zhi Qiang ACS Nano, Vol. 3, Issue 3, p. 569-574 https://doi.org/10.1021/nn900130g	journal	February 2009
Spin scattering in ferromagnetic thin films Viret, M.; Vignoles, D.; Cole, D. Physical Review B, Vol. 53, Issue 13 https://doi.org/10.1103/PhysRevB.53.8464	journal	April 1996
Atomically precise bottom-up fabrication of graphene nanoribbons Cai, Jinming; Ruffieux, Pascal; Jaafar, Rached Nature, Vol. 466, Issue 7305 https://doi.org/10.1038/nature09211	journal	July 2010
Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers Gong, Zhirui; Liu, Gui-Bin; Yu, Hongyi Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3053	journal	June 2013
Ionic screening of charged impurities in electrolytically gated graphene Mišković, Z. L.; Sharma, P.; Goodman, F. O. Physical Review B, Vol. 86, Issue 11 https://doi.org/10.1103/PhysRevB.86.115437	journal	September 2012
Native point defects in few-layer phosphorene Wang, V.; Kawazoe, Y.; Geng, W. T. Physical Review B, Vol. 91, Issue 4 https://doi.org/10.1103/PhysRevB.91.045433	journal	January 2015
Spintronics and pseudospintronics in graphene and topological insulators Pesin, Dmytro; MacDonald, Allan H. Nature Materials, Vol. 11, Issue 5 https://doi.org/10.1038/nmat3305	journal	April 2012
Tunable electronic properties of multilayer phosphorene and its nanoribbons Soleimanikahnoj, S.; Knezevic, I. Journal of Computational Electronics, Vol. 16, Issue 3 https://doi.org/10.1007/s10825-017-1036-1	journal	July 2017
Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei Journal of Applied Physics, Vol. 116, Issue 21 https://doi.org/10.1063/1.4902545	journal	December 2014
Density Inhomogeneity Driven Percolation Metal-Insulator Transition and Dimensional Crossover in Graphene Nanoribbons Adam, S.; Cho, S.; Fuhrer, M. S. Physical Review Letters, Vol. 101, Issue 4 https://doi.org/10.1103/PhysRevLett.101.046404	journal	July 2008
Impurities on graphene: Midgap states and migration barriers Wehling, T. O.; Katsnelson, M. I.; Lichtenstein, A. I. Physical Review B, Vol. 80, Issue 8 https://doi.org/10.1103/PhysRevB.80.085428	journal	August 2009
Ultrafast generation of pseudo-magnetic field for valley excitons in WSe ₂ monolayers Kim, Jonghwan; Hong, Xiaoping; Jin, Chenhao Science, Vol. 346, Issue 6214 https://doi.org/10.1126/science.1258122	journal	December 2014
Challenges for semiconductor spintronics Awschalom, David D.; Flatté, Michael E. Nature Physics, Vol. 3, Issue 3 https://doi.org/10.1038/nphys551	journal	March 2007
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility Liu, Han; Neal, Adam T.; Zhu, Zhen ACS Nano, Vol. 8, Issue 4 https://doi.org/10.1021/nn501226z	journal	March 2014
Phosphorene nanoribbons Carvalho, A.; Rodin, A. S.; Castro Neto, A. H. EPL (Europhysics Letters), Vol. 108, Issue 4 https://doi.org/10.1209/0295-5075/108/47005	journal	November 2014
Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model Páez, Carlos J.; DeLello, Kursti; Le, Duy Physical Review B, Vol. 94, Issue 16 https://doi.org/10.1103/PhysRevB.94.165419	journal	October 2016
Valleytronics in 2D materials Schaibley, John R.; Yu, Hongyi; Clark, Genevieve Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.55	journal	August 2016
Atomically Flat Zigzag Edges in Monolayer MoS ₂ by Thermal Annealing Chen, Qu; Li, Huashan; Xu, Wenshuo Nano Letters, Vol. 17, Issue 9 https://doi.org/10.1021/acs.nanolett.7b02192	journal	August 2017
Highly convergent schemes for the calculation of bulk and surface Green functions Sancho, M. P. Lopez; Sancho, J. M. Lopez; Sancho, J. M. L. Journal of Physics F: Metal Physics, Vol. 15, Issue 4 https://doi.org/10.1088/0305-4608/15/4/009	journal	April 1985
Atomically precise bottom-up fabrication of graphene nanoribbons Cai, J. M.; Ruffieux, P.; Jaafar, R. Nature Publishing Group https://doi.org/10.5167/uzh-36020	text	January 2010
Spintronics: fundamentals and applications Zutic, Igor; Fabian, Jaroslav; Sarma, S. Das Universität Regensburg https://doi.org/10.5283/epub.1823	text	January 2004
Valley contrasting physics in graphene: magnetic moment and topological transport Xiao, Di; Yao, Wang; Niu, Qian arXiv https://doi.org/10.48550/arxiv.0709.1274	text	January 2007
Local gating of a graphene Hall bar by graphene side gates Molitor, F.; Güttinger, J.; Stampfer, C. arXiv https://doi.org/10.48550/arxiv.0709.2970	text	January 2007
Probing charged impurities in suspended graphene using Raman spectroscopy Ni, Zhen Hua; Yu, Ting; Luo, Zhi Qiang arXiv https://doi.org/10.48550/arxiv.0812.4169	text	January 2008
Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics San-Jose, Pablo; Prada, Elsa; McCann, Edward arXiv https://doi.org/10.48550/arxiv.0901.0889	text	January 2009
Pseudospin polarized quantum transport in monolayer graphene Majidi, Leyla; Zareyan, Malek arXiv https://doi.org/10.48550/arxiv.1110.0637	text	January 2011
Phosphorene nanoribbons Carvalho, A.; Rodin, A. S.; Neto, A. H. Castro arXiv https://doi.org/10.48550/arxiv.1404.5115	text	January 2014
Ultrafast Generation of Pseudo-magnetic Field for Valley Excitons in WSe2 Monolayers Kim, Jonghwan; Hong, Xiaoping; Jin, Chenhao arXiv https://doi.org/10.48550/arxiv.1407.2347	text	January 2014
Native point defects in few-layer phosphorene Wang, V.; Kawazoe, Y.; Geng, W. T. arXiv https://doi.org/10.48550/arxiv.1409.5171	text	January 2014
Toward a realistic description of multilayer black phosphorus: from $GW$ approximation to large-scale tight-binding simulations Rudenko, A. N.; Yuan, Shengjun; Katsnelson, M. I. arXiv https://doi.org/10.48550/arxiv.1506.01954	text	January 2015
Room temperature magnetism on the zigzag edges of phosphorene nanoribbons Yang, Guang; Xu, Shenglong; Zhang, Wei arXiv https://doi.org/10.48550/arxiv.1604.06324	text	January 2016
Tunable Electronic Properties of Multilayer Phosphorene and Its Nanoribbons Soleimanikahnoj, S.; Knezevic, I. arXiv https://doi.org/10.48550/arxiv.1607.04941	text	January 2016
Scattering from spin-polarized charged impurities in graphene Vierimaa, Ville; Fan, Zheyong; Harju, Ari arXiv https://doi.org/10.48550/arxiv.1610.03659	text	January 2016
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S.; Geim, A. K.; Morozov, S. V. arXiv https://doi.org/10.48550/arxiv.cond-mat/0410550	text	January 2004
Valley susceptibility of an interacting two-dimensional electron system Gunawan, O.; Shkolnikov, Y. P.; Vakili, K. arXiv https://doi.org/10.48550/arxiv.cond-mat/0605692	text	January 2006
Valley filter and valley valve in graphene Rycerz, A.; Tworzydlo, J.; Beenakker, C. W. J. arXiv https://doi.org/10.48550/arxiv.cond-mat/0608533	text	January 2006

Cited By (6)

Strain engineering of the lattice vibration modes in monolayer black phosphorus Zhang, Liang; Li, Hai; Sun, Changqing Journal of Raman Spectroscopy, Vol. 51, Issue 2 https://doi.org/10.1002/jrs.5766	journal	November 2019
Black phosphorus as a bipolar pseudospin semiconductor Jung, Sung Won; Ryu, Sae Hee; Shin, Woo Jong Nature Materials, Vol. 19, Issue 3 https://doi.org/10.1038/s41563-019-0590-2	journal	February 2020
Photogalvanic effect induced fully spin polarized current and pure spin current in zigzag SiC nanoribbons Chen, Jun; Zhang, Liwen; Zhang, Lei Physical Chemistry Chemical Physics, Vol. 20, Issue 41 https://doi.org/10.1039/c8cp05046e	journal	January 2018
Strain-induced modulation of exchange interaction in monolayer zigzag nanoribbons of B ₂ S Zare, Moslem Materials Research Express, Vol. 6, Issue 10 https://doi.org/10.1088/2053-1591/ab3f79	journal	September 2019
Crystallographic Characterization of Black Phosphorene and its Application in Nanostructures Ren, Yi; Liu, Pu; Zhou, Benliang Physical Review Applied, Vol. 12, Issue 6 https://doi.org/10.1103/physrevapplied.12.064025	journal	December 2019
Topologically protected wave packets and quantum rings in silicene Szafran, Bartłomiej; Rzeszotarski, Bartłomiej; Mreńca-Kolasińska, Alina Physical Review B, Vol. 100, Issue 8 https://doi.org/10.1103/physrevb.100.085306	journal	August 2019